TGL2767-SM 2 31GHz Voltage Variable Attenuator Product Description The TGL2767SM is a packaged wideband voltage- variable attenuator using Qorvo s production 0.15um GaAs pHEMT process (QPHT15). Operating from 231 GHz, the TGL2767SM offers > 20 dB of attenuation range with < 2 dB insertion loss in the reference state. The TGL2767SM s broadband performance allows it to be a single solution for a number of radar and communication bands, as well as electronic warfare, instrumentation and other general RFbased applications. The TGL2767SM is fully matched to 50 ohms and Product Features offered in a small 3.00 x 3.00 mm surface mount package. This, along with using standard control and Frequency Range: 231GHz reference voltages, allows users to integrate the Attenuation Range: 20 dB TGL2767SM into their system with minimal effort. Insertion Loss (Ref. State): < 2 dB Lead-free and RoHS compliant. Control Voltage: 0.0 to 1.5 V Reference Voltage: 1.5 V Package Size: 3.00 x 3.00 x 1.53mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Commercial and Military Radar Block Diagram Satellite Communications Point to Point Radio Electronic Warfare 14 13 12 11 Instrumentation General Purpose 1 10 Voltage RF 2 9 RF Variable Attenuator Input Output Ordering Information 3 8 Part No. Description TGL2767-SM 231 GHz Voltage Variable Attenuator 231 GHz Voltage Var. Attenuator 4 5 6 7 TGL2767-SM EVB Evaluation Board - 1 of 11 - Data Sheet Rev. C June 2020 Subject to change without notice www.qorvo.com TGL2767-SM 2 31GHz Voltage Variable Attenuator Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Control Voltage (V , V ) 3.0 V Control Voltage (V ) V V 01.5 V C S C C S 1 Control Current (IC, IS) 3 mA Reference Voltage (V ) 1.5 V S Input Power (PIN) 30 dBm Operating Temperature Range -40 to +85 C Power Dissipation (PDISS) 1 W 1 Note: VS can be adjusted as needed to compensate for the FET threshold variations among wafer/lots. Mounting Temperature (30 seconds) 260 C Operating Channel Temperature 150 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Storage Temperature -55 to 150C recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions, unless otherwise noted: 25 C, V = 01.5 V, V = 1.5 V V V C S C S Parameter Min Typical Max Units Frequency Range 2 31 GHz Attenuation Range 20 dB Reference State Insertion Loss (VC = 1.5 V) <2.0 dB Input Return Loss >12 dB Output Return Loss >12 dB IIP3 (10 MHz tone spacing, P /Tone = 10 dBm) IN VC set for 0 dB >38 dBm VC set for 5 dB >25 dBm V set for 10 dB C >22 dBm VC set for 15 dB >22 dBm VC set for 20 dB >30 dBm - 2 of 11 - Data Sheet Rev. C June 2020 Subject to change without notice www.qorvo.com