X-On Electronics has gained recognition as a prominent supplier of TGA2219 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2219 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2219 Qorvo

TGA2219 electronic component of Qorvo
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Part No.TGA2219
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 13.4-16.5GHz 25W GaN SSG >33dB PAE >28%
Datasheet: TGA2219 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 10
Multiples : 10
10 : USD 367.0579
30 : USD 284.4947
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Pd - Power Dissipation
Operating Supply Current
Packaging
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Number Of Channels
Input Return Loss
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We are delighted to provide the TGA2219 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2219 and other electronic components in the RF Amplifier category and beyond.

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TGA2219 13.4 16.5 GHz 25 W GaN Power Amplifier Product Overview Qorvos TGA2219 is a Ku-band, high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA2219 operates from 13.4 16.5 GHz and provides 25 W of saturated output power with 27 dB of large signal gain and greater than 28% power- added efficiency. This high performance combination provides system designers the flexibility to improve system performance while reducing size and cost. Key Features The TGA2219 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system Frequency Range: 13.4 16.5 GHz integration. It is ideally suited for military and commercial PSAT: 44 dBm (PIN = 17 dBm) Ku-band radar and satellite communication systems. PAE: > 28% (PIN = 17 dBm) Large Signal Gain: 27 dB (PIN = 17 dBm) Lead-free and RoHS compliant. Small Signal Gain: > 33 dB Bias: V = 28 V, I = 450 mA D DQ Die Dimensions: 4.35 x 3.33 x 0.10 mm Performance Under CW Operation Functional Block Diagram Applications Satellite Communications Data Link Radar Ordering Information Part No. Description 13.4 16.5 GHz 25 W GaN Power TGA2219 Amplifier TGA2219EVBP01 TGA2219 Evaluation Board Data Sheet Rev. B, February 2021 1 of 15 www.qorvo.com Subject to change without notice All rights reserved TGA2219 13.4 16.5 GHz 25 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Typ. Units V Drain Voltage (VD) 29.5 V Drain Voltage (VD) 28 V 450 mA mA Gate Voltage Range (VG) 8 to 0 V Drain Current (IDQ) (Total) Drain Current (ID1-2) 2.9 A Operating Temperature 40 to 150 C Electrical specifications are measured at specified test conditions. Drain Current (I ) 4.3 A D3 Specifications are not guaranteed over all recommended operating See plot on conditions. Gate Current page 10 Power Dissipation (PDISS), 85C, CW 73 W Input Power (PIN), CW, 50, 30 dBm VD = 28 V, IDQ = 450 mA, 85C Input Power (P ), CW, VSWR 3:1, IN 27 dBm VD = 28 V, IDQ = 450 mA, 85C Mounting Temperature (30 seconds) 320C Storage Temperature 40 to 150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 13.4 16.5 GHz Small Signal Gain > 33 dB Input Return Loss > 11 dB Output Return Loss > 5 dB Power Gain (Pin = 17 dBm) 27 dB Output Power (Pin = 17 dBm) 44 dBm Power Added Efficiency (Pin = 17 dBm) > 28 % Small Signal Gain Temperature Coefficient 0.8 dB/C Output Power Temperature Coefficient 0.01 dB/C (Temp: 25C 85 C, Pin = 17 dBm) Recommended Operating Voltage 20 to 28 28 V Test conditions unless otherwise noted: 25C , V = 28 V, I = 450 mA, CW D DQ Data Sheet Rev. B, February 2021 2 of 15 www.qorvo.com Subject to change without notice All rights reserved

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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