TGA2219 Qorvo

TGA2219 13.4 16.5 GHz 25 W GaN Power Amplifier Product Overview Qorvos TGA2219 is a Ku-band, high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA2219 operates from 13.4 16.5 GHz and provides 25 W of saturated output power with 27 dB of large signal gain and greater than 28% power- added efficiency. This high performance combination provides system designers the flexibility to improve system performance while reducing size and cost. Key Features The TGA2219 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system Frequency Range: 13.4 16.5 GHz integration. It is ideally suited for military and commercial PSAT: 44 dBm (PIN = 17 dBm) Ku-band radar and satellite communication systems. PAE: > 28% (PIN = 17 dBm) Large Signal Gain: 27 dB (PIN = 17 dBm) Lead-free and RoHS compliant. Small Signal Gain: > 33 dB Bias: V = 28 V, I = 450 mA D DQ Die Dimensions: 4.35 x 3.33 x 0.10 mm Performance Under CW Operation Functional Block Diagram Applications Satellite Communications Data Link Radar Ordering Information Part No. Description 13.4 16.5 GHz 25 W GaN Power TGA2219 Amplifier TGA2219EVBP01 TGA2219 Evaluation Board Data Sheet Rev. B, February 2021 1 of 15 www.qorvo.com Subject to change without notice All rights reserved TGA2219 13.4 16.5 GHz 25 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Typ. Units V Drain Voltage (VD) 29.5 V Drain Voltage (VD) 28 V 450 mA mA Gate Voltage Range (VG) 8 to 0 V Drain Current (IDQ) (Total) Drain Current (ID1-2) 2.9 A Operating Temperature 40 to 150 C Electrical specifications are measured at specified test conditions. Drain Current (I ) 4.3 A D3 Specifications are not guaranteed over all recommended operating See plot on conditions. Gate Current page 10 Power Dissipation (PDISS), 85C, CW 73 W Input Power (PIN), CW, 50, 30 dBm VD = 28 V, IDQ = 450 mA, 85C Input Power (P ), CW, VSWR 3:1, IN 27 dBm VD = 28 V, IDQ = 450 mA, 85C Mounting Temperature (30 seconds) 320C Storage Temperature 40 to 150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 13.4 16.5 GHz Small Signal Gain > 33 dB Input Return Loss > 11 dB Output Return Loss > 5 dB Power Gain (Pin = 17 dBm) 27 dB Output Power (Pin = 17 dBm) 44 dBm Power Added Efficiency (Pin = 17 dBm) > 28 % Small Signal Gain Temperature Coefficient 0.8 dB/C Output Power Temperature Coefficient 0.01 dB/C (Temp: 25C 85 C, Pin = 17 dBm) Recommended Operating Voltage 20 to 28 28 V Test conditions unless otherwise noted: 25C , V = 28 V, I = 450 mA, CW D DQ Data Sheet Rev. B, February 2021 2 of 15 www.qorvo.com Subject to change without notice All rights reserved