TGA2505 Qorvo

TGA2505 13 - 17 GHz 2.5 Watt, 25dB Power Amplifier Key Features and Performance 34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.25m pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: Preliminary Measured Performance 2.03 x 1.39 x 0.10 mm Bias Conditions: Vd=7V Id=640mA (0.080 x 0.055 x 0.004 inches) Primary Applications VSAT Point-to-Point Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -TGA2505 TABLE I MAXIMUM RATINGS Symbol Parameter 1/ Value Notes + V Positive Supply Voltage 8 V 2/ - V Negative Supply Voltage Range -5V to 0V + I Positive Supply Current (Quiescent) 1300 mA 2/ I Gate Supply Current 18 mA G P Input Continuous Wave Power 24 dBm 2/ IN P Power Dissipation 10.5 W 2/ 3/ D 0 T Operating Channel Temperature 200 C 4/ 5/ CH 0 Mounting Temperature 320 C (30 Seconds) 0 T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ When operated at this bias condition with a base plate temperature of 70 C, the median life is 2.3E4. 4/ These ratings apply to each individual FET. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE TEST (TA = 25 C, Nominal) NOTES SYMBOL LIMITS UNITS MIN MAX 80 381 1/ I mA DSS 175 425 1/ G mS M 0.5 1.5 2/ V V P 830 2/ V V BVGS 13 30 2/ V V BVGD 1/ Measurements are performed on a 800m FET. 2/ V , V , and V are negative. P BVGD BVGS 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -