X-On Electronics has gained recognition as a prominent supplier of TGA2312-FL RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2312-FL RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2312-FL Qorvo

TGA2312-FL electronic component of Qorvo
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Part No.TGA2312-FL
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 9-10GHz Gain 13dB PAE 38% GaN 60W
Datasheet: TGA2312-FL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1203.93 ea
Line Total: USD 1203.93 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1203.93

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Brand
Input Return Loss
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
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We are delighted to provide the TGA2312-FL from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2312-FL and other electronic components in the RF Amplifier category and beyond.

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TGA2312-FL X-band 60W GaN Power Amplifier Applications Commercial and Military Radar Communications Product Features Functional Block Diagram Frequency Range: 9 10 GHz P 48 dBm SAT : PAE: 38% Small Signal Gain: 13 dB Bias: V = 24 V, I = 2.4 A, V = -2.6 V Typical D DQ G Pulsed: PW = 100us, DC = 10% Integrated Thermistor Temperature Monitor Package Dimensions: 17.4 x 24.0 x 3.9 mm General Description Pad Configuration Pad No. Symbol TriQuints TGA2312-FL is a high power amplifier 1 V G operating between 9 and 10 GHz and typically providing 2, 4, 7, 9 N/C 48dBm of saturated output power, 38% power-added 3 RF IN efficiency and 13dB small signal gain. 5 Temp (Thermistor) Ideally suited for marine and weather radar, the 6 V D TGA2312-FL is packaged in a CuW-base, flanged 8 RF OUT package for superior thermal management. 10 V D The TGA2312-FL uses TriQuints 0.25um GaN on SiC technology which provides superior performance while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for reliable high power operation. Ordering Information Lead-free and RoHS compliant. Part ECCN Description Evaluation Boards are available upon request. TGA2312-FL 3A001.b.3.b GaN High Power Amplifier Preliminary Datasheet: Rev - 08-16-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 40 V Drain Voltage (V ) 24 V D D Drain Current (I ) 2400 mA Drain to Gate Voltage DQ 100 V (V -V ) Drain Current Under RF Drive ( I ) 6360 mA D G D Drive Gate Voltage Range (V ) -5 to 0 V Gate Voltage (V ) -2.6 V (Typ.) G G Drain Current (I ) 10 A Electrical specifications are measured at specified test D conditions. Specifications are not guaranteed over all Gate Current (I ) -25 to 56 mA G recommended operating conditions. Power Dissipation (P ) 225 W DISS RF Input Power, CW, 50 , +44 dBm T = 25 C (P ) IN Channel Temperature (T ) 275 C CH Mounting Temperature 260 C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 24 V, I = 2400 mA , Pulsed: PW = 100us, DC = 10%, V = -2.6 V D DQ G Parameter Min Typical Max Units Operational Frequency Range 9 10 GHz Small Signal Gain 13 dB Input Return Loss 15 dB Output Return Loss 14 dB Output Power at Saturation (Pin = 38dBm) 48 dBm Power-Added Efficiency (Pin = 38dBm) 38 % Output TOI 49 dBm Gain Temperature Coefficient -0.02 dB/C Power Temperature Coefficient -0.001 dBm/C TOI Temperature Coefficient -0.001 dBm/C Preliminary Datasheet: Rev - 08-16-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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