TGA2312-FL X-band 60W GaN Power Amplifier Applications Commercial and Military Radar Communications Product Features Functional Block Diagram Frequency Range: 9 10 GHz P 48 dBm SAT : PAE: 38% Small Signal Gain: 13 dB Bias: V = 24 V, I = 2.4 A, V = -2.6 V Typical D DQ G Pulsed: PW = 100us, DC = 10% Integrated Thermistor Temperature Monitor Package Dimensions: 17.4 x 24.0 x 3.9 mm General Description Pad Configuration Pad No. Symbol TriQuints TGA2312-FL is a high power amplifier 1 V G operating between 9 and 10 GHz and typically providing 2, 4, 7, 9 N/C 48dBm of saturated output power, 38% power-added 3 RF IN efficiency and 13dB small signal gain. 5 Temp (Thermistor) Ideally suited for marine and weather radar, the 6 V D TGA2312-FL is packaged in a CuW-base, flanged 8 RF OUT package for superior thermal management. 10 V D The TGA2312-FL uses TriQuints 0.25um GaN on SiC technology which provides superior performance while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for reliable high power operation. Ordering Information Lead-free and RoHS compliant. Part ECCN Description Evaluation Boards are available upon request. TGA2312-FL 3A001.b.3.b GaN High Power Amplifier Preliminary Datasheet: Rev - 08-16-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 40 V Drain Voltage (V ) 24 V D D Drain Current (I ) 2400 mA Drain to Gate Voltage DQ 100 V (V -V ) Drain Current Under RF Drive ( I ) 6360 mA D G D Drive Gate Voltage Range (V ) -5 to 0 V Gate Voltage (V ) -2.6 V (Typ.) G G Drain Current (I ) 10 A Electrical specifications are measured at specified test D conditions. Specifications are not guaranteed over all Gate Current (I ) -25 to 56 mA G recommended operating conditions. Power Dissipation (P ) 225 W DISS RF Input Power, CW, 50 , +44 dBm T = 25 C (P ) IN Channel Temperature (T ) 275 C CH Mounting Temperature 260 C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 24 V, I = 2400 mA , Pulsed: PW = 100us, DC = 10%, V = -2.6 V D DQ G Parameter Min Typical Max Units Operational Frequency Range 9 10 GHz Small Signal Gain 13 dB Input Return Loss 15 dB Output Return Loss 14 dB Output Power at Saturation (Pin = 38dBm) 48 dBm Power-Added Efficiency (Pin = 38dBm) 38 % Output TOI 49 dBm Gain Temperature Coefficient -0.02 dB/C Power Temperature Coefficient -0.001 dBm/C TOI Temperature Coefficient -0.001 dBm/C Preliminary Datasheet: Rev - 08-16-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com