TGA2219-CP 13.416.5GHz 25W GaN Power Amplifier Product Description Qorvos TGA2219-CP is a 3-stage, 25 W power amplifier operating over the 13.4 to 16.5 GHz band. Fabricated on Qorvos QGaN15 production 0.15 um GaN on SiC process, this high performance amplifier offers > 30 dB small-signal gain with 31% PAE, allowing the system designer to achieve superior performance levels in a cost efficient manner. The TGA2219-CP is offered in a 10-lead 15 x 15 mm bolt- down package. Assembled with a pure-copper base, Product Features coupled with its high efficiency, the TGA2219-CP minimizes the strain on the system-level cooling requirements, further Frequency Range: 13.416.5GHz reducing system operating costs. Superior electrical P : 44dBm (P = 16dBm) OUT IN performance and thermal management makes the PAE: > 31% (PIN = 16dBm) TGA2219-CP ideal for supporting communications and radar applications in both commercial and military markets. Large Signal Gain: 28 dB (P = 16dBm) IN Small Signal Gain: > 30dB Both RF ports have integrated DC blocking capacitors and Bias: V = +28V, I = 450mA D DQ are fully matched to 50 Ohms. Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Functional Block Diagram Applications Commercial VSAT Military Satcom 1 10 Datalinks 2 9 Radar 3 8 4 7 5 6 Ordering Information Part No. Description 13.416.5GHz 25W GaN Power TGA2219-CP Amplifier TGA2219-CPEVBP01 TGA2219-CP Evaluation Board - 1 of 15 - Data Sheet Rev. C, February 2021 www.qorvo.com TGA2219-CP 13.416.5GHz 25W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ. Max Units Drain Voltage (V ) +29.5V D Drain Voltage (V ) +28 V D Gate Voltage Range (V ) 5 to 0V G Drain Current, (I ) 450 mA DQ Drain Current (ID) 7.2A Temperature Range 40 +85 C Gate Current (I ) See page 10 G Electrical specifications are measured at specified test Power Dissipation (P ), 85 C 80W DISS conditions. Specifications are not guaranteed over all Input Power (P ), CW, 50, IN 30dBm recommended operating conditions. VD = 28 V, IDQ = 450 mA, 85 C Input Power (PIN), CW, VSWR 3:1, 27dBm VD = 28 V, IDQ = 450 mA, 85 C Soldering Temperature 260 C (30 Seconds) Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 13.4 16.5 GHz Small Signal Gain > 30 dB Input Return Loss > 15 dB Output Return Loss > 5 dB Output Power (PIN = 16dBm) 13.4 GHz 44 44 dBm 15.0 GHz 44.3 44.6 dBm 16.5 GHz 43.9 44.2 dBm Power Added Effi. (PIN = 16dBm) 13.4 GHz 24.8 31.4 % 15.0 GHz 25.0 36.5 % 16.5 GHz 24.8 35.5 % Small Signal Gain Temperature Coefficient -0.08 dB/C Output Power Temperature Coefficient 0.011 dBm/C (Temp: -40 C +85 C P = 16dBm) IN Recommended Operating Voltage +20 to +28 +28 V Test conditions unless otherwise noted: 25 C, V = +28V, I = 450mA, CW D DQ - 2 of 15 - Data Sheet Rev. C, February 2021 www.qorvo.com