TGA1171-SCC Qorvo

Product Data Sheet December 13, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-SCC Key Features and Performance 0.25 um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout P1dB, 38 GHz 14 dB Nominal Gain OTOI 36 dBm at 40 GHz typical Bias 6-7 V 500 mA Chip Dimensions: 2.863 mm x 2.740 mm x 0.1016 mm Primary Applications Point-to-Point Radio Point-to-Multipoint Radio Product Description TGA1171 Fixture Data +7V, 500mA, 25C The TriQuint TGA1171-SCC is a two-stage 20 PA MMIC design using TriQuints proven 0.25 15 S21 m Power pHEMT process to support a 10 variety of millimeter wave applications 5 including point-to-point digital radio and point- 0 to-multipoint systems. -5 -10 The balanced design consists of four 400 m S11 -15 input devices driving eight 400 m output S22 -20 devices. -25 33 34 35 36 37 38 39 40 41 42 Frequency (GHz) The TGA1171 provides 29 dBm of output power at 1 dB gain compression and >30 TGA1171 Fixture Data +7V, 500mA, 25C dBm saturated output power across 36-40 34 GHz with a typical small signal gain of 14 dB. 33 Typical Input/Output RL is typically greater 32 than 12-15 dB across the band. 31 30 29 The TGA1171 requires minimal off-chip 28 components. Each device is 100% DC and 27 RF tested on-wafer to ensure performance 26 compliance. The device is available in chip 25 form. 24 36.0 36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 Frequency (GHz) 1 TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Output P1dB (dBm) Gain and Return Loss (dB)Product Data Sheet December 13, 2001 TGA1171-SCC TABLE I MAXIMUM RATINGS Symbol Parameter 5/ Value Notes + V Positive Supply Voltage 8 V 4/ - V Negative Supply Voltage Range -5V TO 0V + I Positive Supply Current (Quiescent) 960 mA 4/ I Gate Supply Current 56.32 mA G P Input Continuous Wave Power 27 dBm 4/ IN P Power Dissipation 5.25 W 3/ 4/ D 0 T Operating Channel Temperature 150 C1/ 2/ CH 0 T Mounting Temperature 320 C M (30 Seconds) 0 T Storage Temperature -65 to 150 C STG 1/ These ratings apply to each individual FET. 2/ Junction operating temperature will directly affect the device median time to failure (T ). M For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 0 3/ When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced from 9.5 E+6 to 6.1 E+5 hours. 4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 5/ These ratings represent the maximum operable values for this device. 2 TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com