TAT8804D1H 21dB CATV 12V Power Doubler) Product Overview The TAT8804 is an ultra-linear, QFN GaAs amplifier RFSA3043 MMIC intended for output stage amplification in CATV infrastructure applications. The device features a push- pull cascode design which provides flat gain along with ultra-low distortion, making it ideal for use in CATV Package: QFN, 40-pin, 5 x 7mm distribution systems requiring high output power capability. ESD protection is also provided at the output of the device. The TAT8804 draws approximately 650mA from a single +12V supply providing 21dB gain with excellent linearity. Users may adjust the bias current with external voltage Key Features enabling the TAT8804 to be used in applications such as doublers or for lower power system applications. 50 to 1000 MHz Bandwidth The TAT8804 is packaged in an industry standard 40 pin Excellent High Output Linearity at Reduced Supply Voltages 5x7mm QFN package with exposed paddle (EP) beneath the device for thermal and electrical grounding. Ultra-Low CSO/CTB/XMOD For applications requiring demanding VSWR tolerance at Low Noise through 1.2GHz high input overdrive conditions, an EVB with level Excellent Input/Output Return Loss protection is available (TAT8804D1H-EBP). High Gain: 21dB typical at 1.2GHz Variable Bias Control Compact 5X7mm QFN Package High Reliability with RF ESD protection Functional Block Diagram +12V Supply Voltage RFOut A RFOut B V V DD DD 650mA Operating Current 32 31 30 29 28 27 26 25 24 23 22 21 GND 33 20 GND V 34 19 V DD DD BIAS BIAS 35 18 V V DD DD Applications Amp GND 36 17 GND 37 16 GND GND HFC Nodes I ADJ 38 15 GND DD LIN CATV Line Amplifiers N/C 39 14 GND Head End Equipment GND 40 13 GND 501000MHz 75 Amplifier 1 2 3 4 5 6 7 8 9 10 11 12 RFin A GND RFin B CS Pin 1 Marking Exposed Backside Pad (EP) - GND Top View Ordering Information Part Number Description TAT8804D1H GaAs Power Doubler MMIC TAT8804D1H-EB 501200MHz Evaluation Board TAT8804D1H-EBP 501200MHz EVB + Protection Data Sheet Rev L, March 18, 2019 Subject to change without notice - 1 of 16 - www.qorvo.com GND GND N/C N/C ILIN V ADJ CG GND GND N/C N/C GND GND TAT8804D1H 21dB CATV 12V Power Doubler V Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 40 to +100C Device Voltage (VDD) +12 V Operating Temperature 40 to +85C 6 Tj for >10 hours MTTF +165 C Device Voltage (V ) +18V DD Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Device Current (I ) 750mA DD recommended operating conditions. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units (1) Operational Frequency Range 50 1200 MHz Current (I ) 550 650 720 mA DD EVB: EB 21 Gain fo= 50 & 1003 MHz 5 EVB: EBP 19.5 dB (2) 50 to 1003 MHz Gain Flatness -0.5 +0.5 (3) Gain Tilt 50 to 1003 MHz +0.6 fo= 55 MHz 20 Input Return Loss f0o = 1003 MHz 17 dB f = 1200 MHz 16 o fo= 55 MHz 20 f = 1003 MHz 17 Output Return Loss o dB f = 1200 MHz 12 o 1.37:1 EVB: EB 79 Ch. NTSC + 75 Ch. QAM, (16) Overdrive VSWR Mismatch VSWR 6dB offset, (dB) Tolerance 5.85:1 5 Vin=+44dBmV per channel EVB: EBP (3) CSO 73 68 dBc 79 Ch. NTSC + 75 Ch. QAM, CTB 79 70 dBc 6dB offset EQ Note 4 XMOD 62 dBc Vout=+57dBmV with 15.6dB tilt CCN 60 64 dB OIP2 85 dBm f - f = 50MHz, +17dBm/tone Note 4 1 2 OIP3 49 dBm P1dB 34 dBm fo= 50 & 1003 MHz Noise Figure 4.5 dB Thermal Resistance, jb Junction to base 5.5 C/W Notes: 1. S21 Bandwidth can extend to 1200 MHz with some S11 & S22 degradation 2. Using least squares fit across the band 50 to 1003 MHz 3. Gain of S21 S21 1003MHz 50MHz 4. Standard EB configuration (EVB without protection), R1 = 4.3K 5. EBPEvaluation board with protection Data Sheet Rev L, March 18, 2019 Subject to change without notice - 2 of 16 - www.qorvo.com