TAT8888 Qorvo

TAT8888 RFMD + TriQuint = Qorvo CATV GaN Power Doubler Hybrid Applications HFC Nodes TAT8888 CATV Line Amplifiers Head End Equipment SOT-115 Hybrid Module Product Features Functional Block Diagram Excellent High Output Linearity VDD High Gain 24dB at 1000MHz 501000MHz Bandwidth Ultra-Low CSO/CTB/XMOD Low Noise INPUT OUTPUT Excellent Input/Output Match SOT-115J Packaging High Reliability +24V, 445mA General Description Pin Configuration The TAT8888 is an ultra-linear, packaged GaAs/GaN Pin No. Label amplifier intended for output stage amplification in 1 RF Input 75 Ohm CATV infrastructure applications. 23 GND 5 +24 V Supply The TAT8888 features a push-pull cascode design 78 GND which provides flat gain along with ultra-low distortion, 9 RF Output 75 Ohm making it ideal for use in CATV distribution systems requiring high output power capability. The TAT8888 draws 445mA from a +24V supply and exceeds the output linearity performance of traditional GaAs-based amplifiers. The TAT8888 is packaged in an industry standard 7-pin SOT-115J module. Ordering Information Part No. Description TAT8888 CATV GaN Power Doubler Hybrid CATV GaN Power Doubler Hybrid TAT8888S1 (sample) Datasheet: Rev. F 06-03-15 Disclaimer: Subject to change without notice - 1 of 4 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com TAT8888 RFMD + TriQuint = Qorvo CATV GaN Power Doubler Hybrid Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 40 to +100C Supply Voltage (V ) 24 V DD RF Input Power, CW, 75, T=+25C +70 dBmV Case Temperature 30 +100 C 6 Supply Voltage (V ) +30 V Tj for >10 hours MTTF 160 C DD Supply Current (IDD) 600 mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Typical Performance Test conditions unless otherwise noted: V =+24 V, 75 System, Base Temp.=+35C. DD Parameter Conditions Min Typ Max Units Operating Frequency 50 1000 MHz Gain f = 1000MHz 23 24.5 dB Gain Slope 50 to 1000MHz 0.25 1.5 dB Gain Flatness Relative to Slope Line 0.5 0.8 dB 50MHz to <550MHz 18 dB Input Return Loss >550MHz to 1000MHz 16 dB Output Return Loss 50MHz to 1000MHz 18 dB CSO 69 65 dBc 79 channels NTSC CTB 75 69 dBc 75 channels QAM, -6dB offset, XMOD 65 dBc +61dBmV virtual output, 18dB Tilt CCN 55 58 dB Pout= +19dBm/tone, at 500MHz Output IP3 +53 dBm f = 6MHz Noise Figure 3.5 dB Supply Current, I 445 460 mA DD Thermal Resistance, Junction to case 5 C/W jc Datasheet: Rev. F 06-03-15 Disclaimer: Subject to change without notice - 2 of 4 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com