TGA2216-SM 0.1 3.0 GHz 10 W GaN Power Amplifier Product Overview Qorvos TGA2216-SM is a wideband cascode amplifier fabricated on Qorvos production 0.25 um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40 V operation. The TGA2216-SM operates from 0.13.0 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 40% power-added efficiency. The TGA2216-SM is available in a low-cost, surface Key Features mount 32 lead 5 x 5 AIN QFN. It is ideally suited to Frequency Range: 0.13.0 GHz support both radar and communication applications PSAT: >40 dBm at PIN = 27 dBm across defense and commercial markets as well as P1dB: >35 dBm electronic warfare. The TGA2216-SM is fully matched to 50 at both RF ports allowing for simple system PAE: 50% midband integration. DC blocks are required on both RF ports and Large Signal Gain: >13 dB the drain voltage must be injected through an off chip Small Signal Gain: 21 dB bias-tee on the RF output port. Bias: V = 40 V, I = 360 mA, V = -2.4 V Typical, D DQ G1 VG2 = +17.7 V Typical Lead-free and RoHS compliant. Wideband Flat Gain and Power Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram Applications Commercial and Military Radar Communications Electronic Warfare Ordering Information Part Description 0.13.0 GHz 10 W GaN Power TGA2216-SM Amplifier TGA2216-SMTR13 1000 pcs. on 13 inch reel TGA2216-SMEVBP01 Evaluation Board Data Sheet Rev B, January 2020 Subject to change without notice 1 of 21 www.qorvo.com TGA2216-SM 0.13.0 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 80 V Drain Voltage (V ) 40 V D D Gate Voltage Range (V ) -8 to 0 V Drain Current (I ) 360 mA G1 DQ Gate Voltage Range (V ) 0 to 40 V Gate Voltage (V ) -2.4 V (Typ.) G2 G1 Drain Current (ID) 760 mA Gate Voltage (VG2) +17.7 V (Typ.) Gate Current (IG1) -5 to 5.6 mA Gate Current (IG2) -5 to 5.6 mA Power Dissipation (PDISS), 85 C 28 W Input Power (PIN), CW, 50 , 85 C, 33 dBm Input Power (P ), CW, VSWR 10:1, IN 27 dBm VD = 40 V, 85 C Mounting Temperature 260 C (30 Seconds) Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev B, January 2020 Subject to change without notice 2 of 21 www.qorvo.com