TAT7467HTR Qorvo

TAT7467H CATV 75 pHEMT Dual RF Amplifier Applications Replacement for 5 V SOIC-8 Amplifiers Edge QAM Output Stage MDU Output SOIC-8 package Distribution Amplifiers Transmitter Driver Amplifier Product Features Functional Block Diagram 75 , 40-1002 MHz Bandwidth pHEMT device technology Meets DOCSIS 3.0 Output Requirements RF Input A RF Output A 8 1 5 V supply voltage 380 mA typical current consumption On-chip Linearization 2 7 SOIC-8 package 6 3 RF Input B RF Output B 4 5 General Description Pin Configuration The TAT7467H is a 75 fully integrated single-die Pin Symbol differential RF Amplifier covering medium power 1 RF Input A applications in the CATV band. The TAT7467H includes 2 Linearizer A rd on-chip linearization to improve 3 order distortion 3 Linearizer B performance while maintaining low power consumption 4 RF Input B on a 5 V supply. It is fabricated using 6 inch GaAs 5 RF Output B pHEMT technology to optimize performance and cost. 6 Biasing 2 7 Biasing 1 8 RF Output A 9 Ground Slug Ordering Information Part No. Description 75 Dual pHEMT Amplifier TAT7467H (lead-free/RoHS compliant SOIC-8 Pkg) TAT7467H-EB Amplifier Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Data Sheet: Rev G 12-04-12 - 1 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network 2012 TriQuint Semiconductor, Inc. TAT7467H CATV 75 pHEMT Dual RF Amplifier Specifications 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Device Voltage +10 V V 5 V DD o Storage Temperature -60 to +150 C I 380 mA DD o o 6 Operating Temperature -40 to +85 C T (for > 10 hours MTTF) 145 C J Notes: Electrical specifications are measured at specified test conditions. 1. Operation of this device outside the parameter ranges Specifications are not guaranteed over all recommended operating given above may cause permanent damage. conditions Electrical Specifications Test conditions unless otherwise noted: 25 C case temperature, +5 V V DD Parameter Conditions Min Typical Max Units Operational Frequency Range 50 1002 MHz Gain 16.5 dB Gain Flatness See Note 1 +/- 0.75 dB Noise Figure 4.7 dB Input Return Loss 18 dB Output Return Loss 23 dB EQAM Output Out-of-band Spurious Adjacent, See Note 2 and -62 dBc and Noise for single channel on a single Note 3 port Vout = 62 dBmV/ch P1dB 24 dBm OIP3 See Note 4 43 dBm Equivalent Harmonics See Note 5 -63 dBc +5 V V SUPPLY I 380 mA DD o 14.5 C/W Thermal Resistance (jnc. To case) jc Notes: 1. Peak deviation from straight line across full band. 2. Production tested at 66 MHz, 330 MHz, and 990 MHz. 3. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge). 4. 100 MHz tone spacing at 0 dBm/tone. nd rd 5. Spurious and noise levels in channels coinciding with 2 harmonic or 3 harmonic. Data Sheet: Rev G 12-04-12 - 2 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network 2012 TriQuint Semiconductor, Inc.