GRF2013 Guerrilla RF

GRF2013 Released Broadband Linear Gain Block 0.05 to 8.0 GHz Product Description GRF2013 is a broadband gain block with low noise fig- ure and high linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and re- turn losses over 0.7 to 3.8 GHz with a single match. Optimizing the bias inductor and coupling caps for lower Features frequency operation will yield strong performance down to 50 MHz. For applications above 4 GHz, the addition Reference: 5V/90mA/1.9 GHz of simple external matching yields outstanding linearity Gain: 18.5 dB and gain performance up to 8 GHz. OIP3: 38.5 dBm The device is operated from a supply voltage of 2.7 to 8.0V with a selectable Iddq range of 15 to 100 mA for OP1dB: 22.5 dBm optimal efficiency and linearity. NF: 1.3 dB Consult with the GRF applications engineering team for Reference: 8V/100mA/1.9 GHz custom tuning/evaluation board data. De-embedded s- parameters are available on the website landing page Gain: 18.5 dB for the device. OIP3: 41.0 dBm OP1dB: 25.3 dBm NF: 1.4 dB Low Noise Figure Flat Gain Flexible Biasing Internally Matched to 50 Process: GaAs pHEMT Applications Linear Driver Amplifier Small Cells and Cellular Repeaters IF Amplifier Wireless Backhaul TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 06/10/19 1 GRF2013 Released Broadband Linear Gain Block 0.05 to 8.0 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Supply Voltage VDD 0 9.0 V RF Input Power: (Load VSWR < 2:1 VD: <= 8.0 volts) PIN MAX 22 dBm Operating Temperature (Package Heat Sink) T -40 105 C AMB Maximum Channel Temperature (MTTF TMAX 170 C > 10 6 Hours) Maximum Dissipated Power PDISS MAX 1.0 W Electrostatic Discharge: Charged Device Model: CDM 1500 V Human Body Model: HBM 250 V Storage: Storage Temperature T -65 150 C STG Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF2013 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on: Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 06/10/19 2