TAT7461 75 RF Amplifier Applications Distribution Amplifiers Multi-Dwelling Units Drop Amplifiers SOT-89 package Single-ended Gain Block Product Features Functional Block Diagram 50-1000 MHz bandwidth pHEMT device technology On-chip negative feedback providing excellent gain and return loss consistency. On-chip active bias for consistent bias current and repeatable performance. Simple external tuning allows excellent return loss. 4 6 V supply voltage 130 mA typical current consumption 16.1 dB typical gain 2.3 dB typical NF and < 2.6 dB up to 1000 MHz +39 dBm typical OIP3 RF IN GND RFOUT +22 dBm typical P1dB Low distortion: CSO -72 dBc, CTB -88 dBc (26 dBmV/ch at output, 80 ch) SOT-89 package General Description Pin Configuration The TAT7461 is a 75 RF Amplifier designed for CATV Pin Symbol applications to 1000 MHz. The balance of low noise, 1 RF IN excellent distortion, and high-gain is applicable for drop 2 GND and other distribution amplifiers. 3 RF OUT 4 GND PADDLE The TAT7461 is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. It provides consistent gain and return loss from the use of extensive on-chip negative feedback. The TAT7461 also uses an on- chip active bias for consistent bias current and repeatable performance. Simple external tuning allows the TAT7461 to achieve excellent return loss. Ordering Information Part No. Description 75 High linearity pHEMT amplifier TAT7461 (lead-free/RoHS compliant SOT-89 Pkg) TAT7461-EB Amplifier Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Preliminary Data Sheet: Rev C 04/30/10 - 1 of 8 - Disclaimer: Subject to change without noticee 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TAT7461 75 RF Amplifier Specifications 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units o Storage Temperature -65 to +150 C V 6 V DD Device Voltage +10 V I 100 130 150 mA DD o o 2 6 Thermal Resistance (jnt to case) 42 C/W T (for > 10 hours MTTF) 150 C jc J Electrical specifications are measured at specified test conditions. Notes: 1. Operation of this device outside the parameter ranges Specifications are not guaranteed over all recommended operating given above may cause permanent damage. conditions. 2. Refer to Thermal Analysis Report TAT7461, Report No. 30-0011 Rev B. Electrical Specifications Test conditions unless otherwise noted: 25 C, +6 V V DD Parameter Conditions Min Typical Max Units Operational Frequency Range 50 1000 MHz Gain 16.1 dB Gain Flatness +/- 0.3 dB Noise Figure 2.3 dB Input Return Loss 23 dB Output Return Loss 23 dB CSO See Note 1. -72 dBc CTB See Note 1. -88 dBc Output IP2 See Note 2. +61 dBm Output IP3 See Note 2. +39 dBm Vsupply +6 V 100 130 150 mA I DD Notes: 1. 26 dBmV/ch at output, 80 ch flat 2. At 5 dBm/tone 3. Electrical specifications are measured at specified test conditions. 4. Specifications are not guaranteed over all recommended operating conditions. Preliminary Data Sheet: Rev C 04/30/10 - 2 of 8 - Disclaimer: Subject to change without noticee 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network