X-On Electronics has gained recognition as a prominent supplier of TAT7461-P RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TAT7461-P RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TAT7461-P Qorvo

TAT7461-P electronic component of Qorvo
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See Product Specifications
Part No.TAT7461-P
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier RFIC w/active bias 75 Ohm 1002 MHz
Datasheet: TAT7461-P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 8.775
25 : USD 3.0672
100 : USD 2.6568
250 : USD 2.2032
500 : USD 2.0304
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Brand
Input Return Loss
Factory Pack Quantity :
Bandwidth
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TAT7461-P from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TAT7461-P and other electronic components in the RF Amplifier category and beyond.

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TAT7461 75 Ohm RF Amplifier 50 1000 MHz Applications Distribution Amplifiers Multi Dwelling Units Drop Amplifiers Single Ended Gain Block SOT-89 Package Product Features Functional Block Diagram 75 Ohm, 50-1000 MHz Bandwidth Backside Paddle - GND pHEMT Device Technology On-Chip Active Bias and Negative Feedback Low Noise: < 2.6 dB to 1000 MHz Low Distortion: CSO -72, CTB -88 dBc (at Pout = +26 dBmV/ch, 80 ch flat loading) 16.1 dB Typical Gain +39 dBm Typical OIP3 1 2 3 +22 dBm Typical P1dB RF IN GND RF OUT / V DD 2.3 dB Typical NF and < 2.6 dB up to 1000 MHz Unconditionally Stable Top View Low Power Consumption: +5.0 V, 130 mA SOT-89 package General Description Pin Configuration The TAT7461 is a 75 Ohm RF Amplifier designed for Pin No. Label CATV applications to 1000 MHz. The balance of low 1 RF IN noise and distortion provides an outstanding solution for 2 GND drop and distribution amplifiers. 3 RF OUT/V DD Backside Paddle GND The TAT7461 is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. On-chip negative feedback provides excellent gain and return loss stability. The TAT7461 also uses an on-chip active bias for consistent bias current and repeatable performance. Simple external tuning allows the TAT7461 to achieve excellent return loss. Ordering Information Part No. Description TAT7461 75 pHEMT Amplifier TAT7461-EVB 50-1000 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet: Rev D 09-08-14 Disclaimer: Subject to change without notice - 1 of 7 - 2014 TriQuint www.triquint.com TAT7461 75 Ohm RF Amplifier 50 1000 MHz Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Operating Temperature 65 to 85C V +6.0 V DD RF Input Power, CW, 75, T=25 C +27 dBm I 100 130 150 mA DD Supply Voltage (V ) +10.0 V T 40 +85 C DD CASE 6 Operation of this device outside the parameter ranges Tj for >10 hours MTTF +150 C given above may cause permanent damage. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+6 V, Temp= +25C.. DD Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1000 MHz Gain 16.1 dB Gain Flatness 0.3 dB Noise Figure 2.3 dB Input Return Loss 23 dB Output Return Loss 23 dB CSO +26 dBmV/ch at output, 80 ch. flat -72 dBc CTB +26 dBmV/ch at output, 80 ch. flat -88 dBc Output IP2 Pout = +5 dBm/tone, f =1MHz +61 dBm Output IP3 Pout = +5 dBm/tone, f = 1MHz +39 dBm Supply Current 100 130 150 mA Thermal Resistance, Module (junction to case) 42 C/W jc Datasheet: Rev D 09-08-14 Disclaimer: Subject to change without notice - 2 of 7 - 2014 TriQuint www.triquint.com

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