TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Applications Edge QAM Gain Stage MDU Output RF Distribution Amplifiers AH22 Replacement SOIC-8 Package Product Features Functional Block Diagram Pin 1 Reference Mark 75 , 50 MHz to 1218 MHz Bandwidth Low Noise Figure: <3dB RF / V A 1 8 RF / V A IN G OUT DD pHEMT Device Technology A SOIC-8 Package N/C 2 7 N/C GND GND Enhanced Gain and Bandwidth GNDN /C N/CGND 3 6 Adjustable Bias B RF / V B RF / V B 4 5 IN G OUT DD Backside Pad - RF/DC GND General Description Pin Configuration The TAT7472A1F is a 75 RF Amplifier designed for Pin No. Label CATV use, but capable of operation up to 1218MHz. 1 RF /V A IN G The TAT7472 A1F contains two separate amplifiers for 2, 3, 6, 7 GND push pull applications. It is fabricated using 6-inch GaAs 4 RF /V B IN G pHEMT technology to optimize performance and cost. 5 RFOUT/VDD B Each amplifier contains on-chip active biasing. The bias 8 RFOUT/VDD A current set point of each amplifier is adjustable with a single resistor from the input to ground. Backside Pad RF/DC GND Typical supply voltage is +5V, IMD performance and bandwidth can be enhanced with +5.5V and +6V operation. Ordering Information Part No. Description TAT7472A1F 75 Dual pHEMT Amplifier TAT7472A1F-EB 501218MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Datasheet: Rev D 06-08-15 Disclaimer: Subject to change without notice - 1 of 9 - 2014 TriQuint www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Device Voltage (V ) 5.0 V DD () Device Voltage (VDD) +8V Device Current (IDD) 270 320 370 mA Total Device Current (I =I +I ) 400 mA Case Temperature 40 +85 C DD DDA DDB 6 Device Current per Amp (IDDA or IDDB) 200 mA Tj for 10 hours MTTF +150 C Operation of this device outside the parameter ranges given Electrical specifications are measured at specified test above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Single Ended in 50 Ohms Test conditions unless otherwise noted: VCC=+5V, Temp=+25C, 50 System Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1200 MHz Test Frequency 800 MHz Gain 18 dB Pout=5dBm/tone, f=10 MHz, Output IP3 +40 dBm 800MHz Device Current (IDDA or IDDB) 135 163 185 mA Typical Performance Push-Pull Configuration in 75 Ohms Test conditions unless otherwise noted: V =+5 V, Temp.=+25C, 75 System. CC Parameter Conditions Typical Value Units Frequency 50 250 450 860 1210 MHz Gain 15 15 15 15.4 15.4 dB Input Return Loss 22 25 23 16 15 dB Output Return Loss 20 22 21 16 13 dB +41 dBmV/channel CTB 78 76 74 - - dBc 80 channels + 108 QAM, CSO 82 83 80 - - dBc Flat Loading. CCN 68.5 67.5 65 - - dBc 270mA<IDD<320mA Output P1dB +24.5 +24.5 +24.7 +24.5 23.5 dBm (2) Output IP3 Pout= +8dBm/tone, f=10MHz +45 +45 +45 +44 +40 dBm (2) ACPR 62dBmV output, 1ch 69 68 67.5 64 58 dBc Noise Figure 2.2 2.3 2.4 2.5 2.7 dB Total Device Current, IDD 320 mA (1) Thermal Resistance, Junction to base 15 C/W jb Notes: 1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle 2. Improves with higher Vdd see performance plots on page 7 Datasheet: Rev D 06-08-15 Disclaimer: Subject to change without notice - 2 of 9 - 2014 TriQuint www.triquint.com