2.4 GHz High-Gain, High-Efficiency Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power, high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n and 256 QAM applications. For WLAN applications, it typically provides 25 dB gain with 34% power-added efficiency. SST12LP19E has excellent linearity while meet- ing 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm. This power amplifier includes a power detector with dB-wise linear voltage output and features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. SST12LP19E and is offered in 6- contact XSON, 8-contact XSON, and 6-contact X2SON packages. Due to its small package size and high efficiency, this power amplifier is also well suited for ZigBee and Bluetooth applications. Features Excellent RF Stability with Moderate Gain: Low Shut-down Current (~2 A) Typically 25 dB gain across 2.4 2.5 GHz High temperature stability High linear output power: ~1 dB gain/power variation between 0C to +85C >26 dBm P1dB Excellent On-chip power detection - Please refer to Absolute Maximum Stress Ratings on page 6 20 dB dynamic range on-chip power detection Meets 802.11g OFDM ACPR requirement up to 23.5 dB-wise linear output voltage dBm Temperature stable and load insensitive 3% EVM up to 18 dBm (high-efficiency configuration) or ~3% EVM up to 19.5 dBm (high-power configuration) for Simple input/output matching 54 Mbps 802.11g signal 2.5% EVM up to 16.5 dBm for MCS720 MHz band- Packages available width 8-contact XSON 2mm x 2mm x 0.5 mm max 1.8% EVM up to 16 dBm for MCS940 MHz bandwidth 6-contact XSON 1.5mm x 1.5mm x 0.5 mm max Meets 802.11b ACPR requirement up to 23 dBm 6-contact X2SON 1.5mm x 1.5mm x 0.4mm max High power-added efficiency/Low operating cur- All non-Pb (lead-free) devices are RoHS compliant rent for 802.11b/g/n applications ~34%/200 mA P = 23.5 dBm for 802.11g OUT ~31%/195 mA P = 23 dBm for 802.11b OUT Applications Single-pin low I power-up/down control REF I <2 mA REF WLAN (IEEE 802.11b/g/n/256 QAM) Low idle current Bluetooth ~40-65 mA I , depending on package type and config- CQ uration. ZigBee High-speed power-up/down Cordless phones Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included 2.4 GHz ISM wireless equipment <200 ns 2014 www.microchip.com DS70005041D 08/142.4 GHz High-Gain, High-Efficiency Power Amplifier SST12LP19E Data Sheet Product Description SST12LP19E is a versatile, 2.4 GHz power amplifier based on the highly-reliable InGaP/GaAs HBT technology. While it is designed to meet the high-linearity requirement of IEEE 802.11b/g/n/256 QAM, the power amplifiers high efficiency also makes it useful for Bluetooth and ZigBee applications. SST12LP19E can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 25 dB gain with 34% power-added effi- ciency (PAE) P = 23.5 dBm for 802.11g and 31% PAE P = 23 dBm for 802.11b. OUT OUT This device has excellent linearity, typically ~3% added EVM at 19.5 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm. SST12LP19E can also be easily configured for high-efficiency operation, typically 3% added EVM at 18 dBm output power and 92 mA total power consumption for 54 Mbps 802.11g applications. It operates at 2.5% EM at typically 16.5 dBm for MCS7-20 MHz and 1.8% EVM at 16 dBm for MCS9-40 MHz bandwidth. High-efficiency operation is desirable in embedded applications, such as in hand-held units, where SST12LP19E can provide 25 dB gain and meet 802.11b/g/n/256 QAM spectrum mask at 22 dBm output power with 34% PAE. This power amplifier also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes the REF SST12LP19E controllable by an on/off switching signal directly from the baseband chip. These features cou- pled with low operating current make the SST12LP19E ideal for the final stage power amplification in battery- powered 802.11b/g/n/256 QAM WLAN transmitter applications. SST12LP19E has an excellent on-chip, single-ended power detector, which features wide-range (>20 dB) with dB-wise linear output voltage. The excellent on-chip power detector provides a reliable solution to board- level power control. The SST12LP19E is offered in 8-contact XSON, 6-contact XSON, and 6-contact X2SON packages. See Fig- ure 3 for pin assignments and Tables 1 and 2 for pin descriptions. 2014 DS70005041D 08/14 2