SST13LP05-MLCF Microchip

2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 A Microchip Technology Company Data Sheet The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 fea- tures easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features High Gain: Low shut-down current (< 0.1 A) Typically 29 dB gain across 2.42.5 GHz over tempera- Excellent On-chip power detection ture 0C to +85C <+/- 0.3dB variation between 0C to +85C High linear output power: <+/- 0.4dB variation with 2:1 VSWR mismatch <+/- 0.3dB variation Ch1 through Ch14 >26 dBm P1dB - Please refer to Absolute Maximum Stress Ratings on 20 dB dynamic range on-chip power detection page 5 Meets 802.11g OFDM ACPR requirement up to 22 dBm Simple input/output matching ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal Meets 802.11b ACPR requirement up to 22 dBm Packages available 16-contact VQFN 3mm x 3mm High power-added efficiency/Low operating cur- rent for both 802.11g/b applications All non-Pb (lead-free) devices are RoHS compliant ~22%/220 mA P = 22 dBm for 802.11g OUT ~21%/230 mA P = 22 dBm for 802.11b OUT Single-pin low I power-up/down control REF Applications I <2 mA REF WLAN (IEEE 802.11g/b) Low idle current ~70 mA I CQ Home RF High-speed power-up/down Cordless phones Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included 2.4 GHz ISM wireless equipment <200 ns High temperature stability ~1 dB gain/power variation between 0C to +85C 2011 Silicon Storage Technology, Inc. www.microchip.com DS75033A 10/112.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 A Microchip Technology Company Data Sheet Product Description The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech- nology. The SST12LP07 can be easily configured for high-power applications with good power-added effi- ciency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB gain with 22% power-added efficiency P = 22 dBm for 802.11g and 21% power-added effi- OUT ciency P = 22 dBm for 802.11b. OUT The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54 Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desir- able in embedded applications such as in hand-held units. The SST12LP07 also features easy board-level usage along with high-speed power-up/down con- trol through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) REF makes the SST12LP07 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP07 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range (~20 dB) with dB-wise linearization and high stability over temperature (< +/-0.3 dB 0C to +85C), fre- quency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR all phases). The excellent on-chip power detector provides a reliable solution to board-level power con- trol. The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2011 Silicon Storage Technology, Inc. DS75033A 10/11 2