SST25PF020B-80-4C-SAE-T Microchip

SST25PF020B 2-Mbit 2.3V-3.6V SPI Serial Flash Features Packages Single Voltage Read and Write Operations: 8-Lead SOIC (150 mils), 8-Contact USON (3 mm x 2 mm) and 8-Contact WSON - 2.3V-3.6V (6 mm x 5 mm) Serial Interface Architecture: - SPI Compatible: Mode 0 and Mode 3 Product Description High-Speed Clock Frequency: The 25 series Serial Flash family features a four-wire, - 80 MHz (2.7V-3.6V operation) SPI compatible interface that allows for a low pin-count - 50 MHz (2.3V-2.7V operation) package which occupies less board space and ulti- Superior Reliability: mately lowers total system costs. The SST25PF020B - Endurance: 100,000 cycles (typical) devices are enhanced with improved operating fre- - Greater than 100 years data retention quency and even lower power consumption. Low-Power Consumption: SST25PF020B SPI serial Flash memories are manu- - Active Read current: 10 mA (typical) factured with proprietary, high-performance CMOS - Standby current: 5 A (typical) SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and Flexible Erase Capability: manufacturability compared with alternate approaches. - Uniform 4-Kbyte sectors The SST25PF020B devices significantly improve per- - Uniform 32-Kbyte overlay blocks formance and reliability, while lowering power con- - Uniform 64-Kbyte overlay blocks sumption. The devices write (Program or Erase) with a Fast Erase and Byte Program: single power supply of 2.3V-3.6V for SST25PF020B. - Chip Erase time: 35 ms (typical) The total energy consumed is a function of the applied - Sector/Block Erase time: 18 ms (typical) voltage, current and time of application. Since for any given voltage range the SuperFlash technology uses - Byte Program time: 7 s (typical) less current to program and has a shorter erase time, Auto Address Increment (AAI) Programming: the total energy consumed during any erase or pro- - Decrease total chip programming time over gram operation is less than alternative Flash memory Byte Program operations technologies. End-of-Write Detection: See Figure 2-1 for pin assignments. - Software polling the BUSY bit in STATUS register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ): - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ): - Enables/Disables the Lock-Down function of the STATUS register Software Write Protection: - Write protection through Block Protection bits in STATUS register Temperature Range: - Commercial: 0C to +70C All devices are RoHS compliant 2012-2020 Microchip Technology Inc. DS20005135C-page 1SST25PF020B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at: