SST12LP14-QVCE Microchip

2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet The SST12LP14 is a high-performance power amplifier IC based on the highly- reliable InGaP/GaAs HBT technology. Easily configured for high-power, high-effi- ciency applications with superb power-added efficiency, it typically provides 30 dB gain with 22% power added efficiency. The SST12LP14 has excellent linearity while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications, and is offered in 16-contact VQFN package. Features Applications High Gain: WLAN (IEEE 802.11g/b) Typically 30 dB gain across 2.4~2.5 GHz over tempera- Home RF ture 0C to +80C Cordless phones High linear output power: >26.5 dBm P1dB 2.4 GHz ISM wireless equipment Meets 802.11g OFDM ACPR requirement up to 23 dBm Added EVM ~4% up to 20 dBm for 54 Mbps 802.11g signal Meets 802.11b ACPR requirement up to 24 dBm High power-added efficiency/Low operating cur- rent for both 802.11g/b applications ~22% P = 22 dBm for 802.11g OUT ~26% P = 23.5 dBm for 802.11b OUT Built-in Ultra-low I power-up/down control REF I <4 mA REF Low idle current ~60 mA I CQ High-speed power-up/down Turn on/off time (10%~90%) <100 ns Typical power-up/down delay with driver delay included <200 ns High temperature stability ~1 dB gain/power variation between 0C to +80C ~1 dB detector variation over 0C to +80C Low shut-down current (< 0.1 A) On-chip power detection 25 dB dynamic range on-chip power detection Simple input/output matching Packages available 16-contact VQFN (3mm x 3mm) Non-Pb (lead-free) packages available 2011 Silicon Storage Technology, Inc. www.microchip.com DS75031A 10/112.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Product Description The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/ GaAs HBT technology. The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 30 dB gain with 22% power-added efficiency P = 22 dBm for 802.11g and 27% power- OUT added efficiency P = 24 dBm for 802.11b. OUT The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80C), sin- gle-ended/differential power detectors which lower users cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/ down control. Ultra-low reference current (total I <4 mA) makes the SST12LP14 controllable by REF an on/off switching signal directly from the baseband chip. These features coupled with low operat- ing current make the SST12LP14 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. TheSST12LP14 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2011 Silicon Storage Technology, Inc. DS75031A 10/11 2