X-On Electronics has gained recognition as a prominent supplier of SST12LP14-QVCE RF Amplifier across the USA, India, Europe, Australia, and various other global locations. SST12LP14-QVCE RF Amplifier are a product manufactured by Microchip. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

SST12LP14-QVCE Microchip

SST12LP14-QVCE electronic component of Microchip
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Part No.SST12LP14-QVCE
Manufacturer: Microchip
Category: RF Amplifier
Description: Microchip Technology RF Amplifier 2.4GHz PWR AMPLIFIER
Datasheet: SST12LP14-QVCE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3875 ea
Line Total: USD 1.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3875
25 : USD 1.1107
100 : USD 0.9609

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.647
3000 : USD 1.452
9000 : USD 1.404

   
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We are delighted to provide the SST12LP14-QVCE from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST12LP14-QVCE and other electronic components in the RF Amplifier category and beyond.

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2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet The SST12LP14 is a high-performance power amplifier IC based on the highly- reliable InGaP/GaAs HBT technology. Easily configured for high-power, high-effi- ciency applications with superb power-added efficiency, it typically provides 30 dB gain with 22% power added efficiency. The SST12LP14 has excellent linearity while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications, and is offered in 16-contact VQFN package. Features Applications High Gain: WLAN (IEEE 802.11g/b) Typically 30 dB gain across 2.4~2.5 GHz over tempera- Home RF ture 0C to +80C Cordless phones High linear output power: >26.5 dBm P1dB 2.4 GHz ISM wireless equipment Meets 802.11g OFDM ACPR requirement up to 23 dBm Added EVM ~4% up to 20 dBm for 54 Mbps 802.11g signal Meets 802.11b ACPR requirement up to 24 dBm High power-added efficiency/Low operating cur- rent for both 802.11g/b applications ~22% P = 22 dBm for 802.11g OUT ~26% P = 23.5 dBm for 802.11b OUT Built-in Ultra-low I power-up/down control REF I <4 mA REF Low idle current ~60 mA I CQ High-speed power-up/down Turn on/off time (10%~90%) <100 ns Typical power-up/down delay with driver delay included <200 ns High temperature stability ~1 dB gain/power variation between 0C to +80C ~1 dB detector variation over 0C to +80C Low shut-down current (< 0.1 A) On-chip power detection 25 dB dynamic range on-chip power detection Simple input/output matching Packages available 16-contact VQFN (3mm x 3mm) Non-Pb (lead-free) packages available 2011 Silicon Storage Technology, Inc. www.microchip.com DS75031A 10/112.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Product Description The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/ GaAs HBT technology. The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 30 dB gain with 22% power-added efficiency P = 22 dBm for 802.11g and 27% power- OUT added efficiency P = 24 dBm for 802.11b. OUT The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80C), sin- gle-ended/differential power detectors which lower users cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/ down control. Ultra-low reference current (total I <4 mA) makes the SST12LP14 controllable by REF an on/off switching signal directly from the baseband chip. These features coupled with low operat- ing current make the SST12LP14 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. TheSST12LP14 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2011 Silicon Storage Technology, Inc. DS75031A 10/11 2

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