SST12LP17A 2.4 GHz WLAN, High-Efficiency Power Amplifier Module Features 1.0 PRODUCT DESCRIPTION Input/Output ports internally matched to 50 and The SST12LP17A is a versatile power amplifier based DC decoupled on the highly-reliable InGaP/GaAs HBT technology.The input/output RF ports are fully matched to 50 internally. High gain: These RF ports are DC decoupled and require no DC-block- - Typically 28 dB gain across 2.42.5 GHz ing capacitors or matching components. This helps reduce High linear output power: the system boards Bill of Materials (BOM) cost. - >24 dBm P1dB SST12LP17A is a 2.4 GHz fully-integrated, high-effi- - Single-tone measurement. Please refer to ciency Power Amplifier module designed in compliance Absolute Maximum Stress Ratings on page 5 - Meets 802.11g OFDM ACPR requirement up to with IEEE 802.11b/g/n/ac applications. It typically pro- 21.5 dBm vides 28 dB gain with 28% power-added efficiency - 3% EVM up to 17.5 dBm for 54 Mbps 802.11g signal (PAE) POUT = 21.5 dBm for 802.11g and 33% PAE - 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz POUT = 22.5 dBm for 802.11b. - Meets 802.11b ACPR requirement up to 22.5 dBm This power amplifier has excellent linearity, typically 3% - Meets Bluetooth spectrum mask for 3 Mbps at added EVM at 17.5 dBm output power which is essen- 17 dBm typical tial for 54 Mbps 802.11g operation while meeting High power-added efficiency/Low operating cur- 802.11g spectrum mask at 21.5 dBm and 802.11b rent for 802.11b/g/n applications spectrum mask at 22.5 dBm. Using MCS7 modulation, with 40 MHz bandwidth, the SST12LP17A provides 17 - ~28%/138 mA P = 21.5 dBm for 802.11g OUT dBm at 2.5% EVM. - ~33%/155 mA P = 22.5 dBm for 802.11b OUT Single-pin low I power-up/down control The device also features easy board-level usage along REF with high-speed power-up/down control through a sin- -I <2 mA REF gle combined reference voltage pin. Ultra-low refer- Low idle current ence current (total I <2 mA) makes the REF -~60 mA I CQ SST12LP17A controllable by an on/off switching signal High-speed power-up/down directly from the baseband chip. These features, cou- - Turn on/off time (10%- 90%) <100 ns pled with low operating current, make the - Typical power-up/down delay with driver delay SST12LP17A ideal for the final stage power amplifica- included <200 ns tion in battery-powered 802.11b/g/n WLAN transmitter and Bluetooth applications. Low shut-down current (~2 A) Stable performance over temperature The SST12LP17A has an excellent on-chip, single- ended power detector, which features wide dynamic- - ~2 dB gain variation between -40C to +85C range, >15 dB, with dB-wise linear performance. The - ~1 dB power variation between -40C to +85C excellent on-chip power detector provides a reliable Excellent on-chip power detection solution to board-level power control. - >15 dB dynamic range, dB-wise linear The SST12LP17A is offered in a 10-contact X2QFN - VSWR insensitive, temperature stable package. See Figure 3-1 for pin assignments and Table Packages available 3-1 for pin descriptions. - 10-contact X2QFN 1.5mm x 1.5mm x 0.4mm Non-Pb (lead-free), RoHS compliant, and Halo- gen free Applications WLAN (IEEE 802.11b/g/n) Bluetooth Cordless phones 2.4 GHz ISM wireless equipment 2015 Microchip Technology Inc. Preliminary DS70005214A-page 1SST12LP17A TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: