X-On Electronics has gained recognition as a prominent supplier of AG503-89G RF Amplifier across the USA, India, Europe, Australia, and various other global locations. AG503-89G RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

AG503-89G Qorvo

AG503-89G electronic component of Qorvo
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Part No.AG503-89G
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier DC-4000MHz 21.5dB Gain@900MHz
Datasheet: AG503-89G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.379
25 : USD 1.8211
100 : USD 1.4211
250 : USD 1.179
500 : USD 1.0632
1000 : USD 0.9369
2500 : USD 0.8421
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AG503-89G from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AG503-89G and other electronic components in the RF Amplifier category and beyond.

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AG503-89 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The AG503-89 is a general-purpose buffer amplifier that DC 4000 MHz offers high dynamic range in a low-cost surface-mount 4 +15.5 dBm P1dB at 900 MHz package. At 900 MHz, the AG503-89 typically provides +29 dBm OIP3 at 900 MHz 21.5 dB of gain, +29 dBm OIP3, and +15.5 dBm P1dB. The device combines dependable performance with 21.5 dB Gain at 900 MHz consistent quality to maintain MTTF values exceeding Single Voltage Supply 1000 years at mounting temperatures of +85 C and is 1 23 Lead-free / RoHS-compliant / housed in a lead-free/green/RoHS-compliant SOT-89 RF IN GND RF OUT Green SOT-89package industry-standard SMT package. Internally matched to 50 The AG503-89 consists of Darlington pair amplifiers using Function Pin No. the high reliability InGaP/GaAs HBT process technology Input 1 and only requires DC-blocking capacitors, a bias resistor, Output/Bias 3 Applications and an inductive RF choke for operation. Ground 2, 4 Mobile Infrastructure The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies CATV / FTTX such as GPRS, GSM, CDMA, and W-CDMA. In addition, W-LAN / ISM the AG503-89 will work for other various applications RFID within the DC to 4 GHz frequency range such as CATV and WiMAX. WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 4000 Frequency MHz 500 900 1900 2140 Test Frequency MHz 900 S21 dB 22.0 21.3 19.1 18.7 Gain dB 21.3 S11 dB -18 -15 -15 -17 Input Return Loss dB 15 S22 dB -24 -17 -10.6 -10.4 Output Return Loss dB 17 Output P1dB dBm +15.6 +15.6 +14.4 +14.2 (2) Output P1dB dBm +15.6 Output IP3 dBm +29.4 +29.0 +27.4 +27.2 (2) Output IP3 dBm +29 Noise Figure dB 3.0 3.1 3.3 3.3 Output IP2 dBm +37 Noise Figure dB 3.1 Test Frequency MHz 1900 Gain dB 18.1 19.1 20.1 Output P1dB dBm +14.4 (2) Output IP3 dBm +27.4 Device Voltage V 5.0 Device Current mA 45 1. Test conditions: 25 C, Supply Voltage = +6 V, R = 22.1 , 50 System. bias 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +150 C DC Voltage +5.8 V Part No. Description RF Input Power (continuous) +10 dBm InGaP HBT Gain Block AG503-89G Junction Temperature +177 C (lead-free/green/RoHS-compliant SOT-89 Package) AG503-89PCB 700 2400 MHz Fully Assembled Eval. Board Thermal Resistance, Rth 232 C / W Standard T/R size = 3000 pieces on a 13 reel. Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 5 January 2008 AG503-89 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, R = 22.1 , I = 45 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 22.3 22.0 21.3 19.1 18.7 18.2 16.6 12.8 S11 dB -26 -18 -15 -15 -17 -22 -27 -16 S22 dB -18 -24 -17 -10.6 -10.4 -10.7 -16 -8.2 Output P1dB dBm +15.9 +15.6 +15.6 +14.4 +14.2 +14.0 +11.3 Output IP3 dBm +29.4 +29.4 +29.0 +27.4 +27.2 +26.8 Noise Figure dB 3.0 3.0 3.1 3.3 3.3 3.4 1. Test conditions: T = 25 C, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1 , Icc = 45 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss I-V Curve 22 0 80 20 -10 60 Optimal operating point 18 -20 40 16 20 -30 14 S11 S22 -40 C +25 C +85 C 0 -40 12 3.03.4 3.84.2 4.65.0 5.4 0123 45 6 01 2 3 4 Device Voltage (V) Frequency (GHz) Frequency (GHz) Output IP3 vs. Frequency Output IP2 vs. Frequency Noise Figure vs. Frequency 35 45 5 4 30 40 3 25 35 2 20 30 1 -40 C +25 C +85 C -40 C +25 C +85 C -40 C +25 C +85 C 15 0 25 00.511.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) Frequency (GHz) Frequency (MHz) Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power P1dB vs. Frequency frequency = 900 MHz frequency = 2000 MHz 20 20 20 18 20 18 16 16 16 15 Gain Gain 16 12 14 12 10 14 8 12 8 5 Output Power 12 4 10 4 -40 C +25 C +85 C Output Power 0 10 0 8 0 00.511.522.5 3 3.5 4 -12 -8 -4 048 -12 -8 -4 048 Frequency (GHz) Input Power (dBm) Input Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 5 January 2008 Gain (dB) P1dB (dBm) OIP3 (dBm) Gain (dB) OIP2 (dBm) S11, S22 (dB) Output Power (dBm) Gain (dB) NF (dB) Device Current (mA) Output Power (dBm)

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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