ALM-11136 870 MHz 915 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature Data Sheet Description Features Avago Technologies ALM-11136 is an easy-to-use GaAs Very Low Noise Figure MMIC Tower Mount Amplifier (TMA) LNA Module with low Low Bypass IL IL bypass path. The module has low noise and high linearity Good Return Loss achieved through the use of Avago Technologies propri- etary 0.25 mm GaAs Enhancement-mode pHEMT process. Fail-safe Bypass mode All matching components are fully integrated within the High linearity performance module and the 50 ohm RF input and output pins are High isolation LNA mode already internally AC-coupled. This makes the ALM-11136 extremely easy to use as the only external parts are DC Flat gain supply bypass capacitors. For optimum performance GaAs E-pHEMT Technology at other bands, ALM-11036 (776-870 MHz), ALM-11236 Single 5 V power supply (1710-1850 MHz) and ALM-11336 (1850-1980) are recom- 3 mended. All ALM-11x36 share the same package and pin Compact MCOB package 7.0 x 10.0 x 1.5 mm out configuration. MSL2a Pin Configuration and Package Marking Specifications 3 7.0 x 10.0 x 1.5 mm 36-lead MCOB 915 MHz 5 V, 92 mA (Typical) 15.4 dB Gain 18 dB RL 0.76 dB Noise Figure 22 dBm IIP3 4.5 dBm Input Power at 1dB gain compression 0.85 dB Bypass IL Pin Connection 18 dB Bypass RL 4 RF IN 26 1 23 RF OUT 50 dB isolation LNA mode 25 2 28 EXT P2 24 3 Applications 23 4 30 EXT P1 22 5 Tower Mount Amplifier (TMA) 21 6 33 Vdd 20 7 Cellular Infrastructure Others GND 19 8 Attention: Observe precautions for handling electrostatic sensitive devices. Note: Package marking provides orientation and identification ESD Machine Model = 350 V 11136 = Device Part Number ESD Human Body Model = 1500 V WWYY = Work week and Year of manufacture Refer to Avago Application Note A004R: XXXX = Last 4 digit of Lot number Electrostatic Discharge, Damage and Control. 18 27 17 28 16 29 AVAGO 15 30 11136 14 31 13 32 WWYY 12 33 XXXX 11 34 10 35 9 36 1 Absolute Maximum Rating T = 25 C A 2 Thermal Resistance Symbol Parameter Units Absolute Max. (V = 5.0 V, I = 100 mA) = 83.1C/W dd dd jc V Device Voltage, V 5.5 dd Notes: RF output to ground 1. Operation of this device in excess of any of P CW RF Input Power dBm +15 these limits may cause permanent damage. in,max 2. Thermal resistance measured using Infra-Red (V = 5.0 V, I = 100 mA) dd dd Measurement Technique. 3 P Total Power Dissipation W 0.715 diss 3. Power dissipation with unit turned on. Board temperature T is 25 C. Derate at 12.3 mW/C C T Junction Temperature C 150 j for T > 92 C. C T Storage Temperature C -65 to 150 STG 1, 4 Electrical Specifications RF performance at T = 25 C, V = 5 V, 915 MHz, measured on demo board in Figure 1 with component listed in Table1 A dd for DC bypass. Symbol Parameter and Test Condition Frequency (MHz) Units Min. Typ. Max. I Drain Current mA 75 92 107 dd Gain Gain 900 dB 15.4 915 14 15.4 17 IRL Input Return Loss, 50 source dB 22 ORL Output Return Loss, 50 load dB 22 2 NF Noise Figure 900 dB 0.76 915 0.76 0.91 3 IIP3 Input Third Order Intercept Point dBm 19.7 22 IP1dB Input Power at 1 dB Gain Compression dBm 3.35 4.5 Bypass IL Bypass Insertion Loss, 50 load Vdd = 0 V 900 dB 0.85 915 0.85 1.1 Bypass IRL Input Return Loss, 50 source Vdd = 0 V dB 25 Bypass ORL Output Return Loss, 50 load Vdd = 0 V dB 25 ISOL Bypass Isolation LNA ON Vdd = 5 V dB 54 Notes: 1. Measurements at 915 MHz obtained using demo board described in Figure 1. 2. For NF data, board losses of the input have not been de-embedded. 3. IIP3 test condition: F = 915 MHz, F = 916 MHz with input power of -15 dBm per tone. RF1 RF2 4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 2