ALM-11336 1850 MHz 1980 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature Data Sheet Description Features Avago Technologies ALM-11336 is an easy-to-use GaAs Very Low Noise Figure MMIC Tower Mount Amplifier (TMA) LNA Module with low Low Bypass IL IL bypass path. The module has low noise and high linearity Good Return Loss achieved through the use of Avago Technologies propri- etary 0.25 mm GaAs Enhancement-mode pHEMT process. Fail-safe Bypass mode All matching components are fully integrated within the High linearity performance module and the 50 ohm RF input and output pins are High isolation LNA mode already internally AC-coupled. This makes the ALM-11336 extremely easy to use as the only external parts are DC Flat gain supply bypass capacitors. For optimum performance GaAs E-pHEMT Technology at other bands, ALM-11036 (776-870 MHz), ALM-11136 Single 5 V power supply (870-915 MHz) and ALM-11236 (1710-1850) are recom- 3 mended. All ALM-11x36 share the same package and pin Compact MCOB package 7.0 x 10.0 x 1.5 mm out configuration. MSL2a Pin Configuration and Package Marking Specifications 3 7.0 x 10.0 x 1.5 mm 36-lead MCOB 1980 MHz 5 V, 100 mA (Typical) 15.3 dB Gain 1 26 2 25 18 dB RL 3 24 0.72 dB Noise Figure 4 23 5 22 17.9 dBm IIP3 6 21 7 20 3.8 dBm Input Power at 1dB gain compression 8 19 0.78 dB Bypass IL Pin Connection 18 dB Bypass RL 4 RF IN 50 dB isolation LNA mode 1 26 23 RF OUT 25 2 28 EXT P2 Applications 24 3 30 EXT P1 23 4 Tower Mount Amplifier (TMA) 22 5 33 Vdd 21 6 Cellular Infrastructure 20 7 Others GND 19 8 Attention: Observe precautions for handling electrostatic sensitive devices. Note: ESD Machine Model = 300 V Package marking provides orientation and identification 11336 = Device Part Number ESD Human Body Model = 2000 V WWYY = Work week and Year of manufacture Refer to Avago Application Note A004R: XXXX = Last 4 digit of Lot number Electrostatic Discharge, Damage and Control. 9 36 18 27 10 35 17 28 16 29 11 34 AVAGO 33 15 30 12 11336 13 32 14 31 WWYY 13 32 14 XXXX 31 15 30 12 33 16 29 11 34 10 35 17 28 18 27 9 36 1 Absolute Maximum Rating T = 25 C A 2 Thermal Resistance Symbol Parameter Units Absolute Max. (V = 5.0 V, I = 100 mA) = 56.2 C/W dd dd jc V Device Voltage, V 5.5 dd Notes: RF output to ground 1. Operation of this device in excess of any of P CW RF Input Power dBm +15 these limits may cause permanent damage. in,max 2. Thermal resistance measured using Infra-Red (V = 5.0 V, I = 100 mA) dd dd Measurement Technique. 3 P Total Power Dissipation W 0.715 diss 3. Power dissipation with unit turned on. Board temperature T is 25 C. Derate at 17.8 mW/C c T Junction Temperature C 150 j for T > 109.8 C. c T Storage Temperature C -65 to 150 STG 1, 4 Electrical Specifications RF performance at T = 25 C, V = 5 V, 1980 MHz, measured on demo board in Figure 1 with component listed in Table1 A dd for DC bypass. Symbol Parameter and Test Condition Frequency (MHz) Units Min. Typ. Max. I Drain Current mA 81 100 117 dd Gain Gain 1850 dB 15.6 1910 15.4 1980 13.8 15.3 16.8 IRL Input Return Loss, 50 source dB 23 ORL Output Return Loss, 50 load dB 28 2 NF Noise Figure 1850 dB 0.72 1910 0.72 1980 0.72 0.9 3 IIP3 Input Third Order Intercept Point dBm 14 17.9 IP1dB Input Power at 1 dB Gain Compression dBm 2.85 3.8 Bypass IL Bypass Insertion Loss, 50 load Vdd = 0 V 1980 dB 0.78 1.1 Bypass IRL dB 23 Input Return Loss, 50 source Vdd = 0 V Bypass ORL Output Return Loss, 50 load Vdd = 0 V dB 23 ISOL Bypass Isolation LNA ON Vdd = 5 V dB 65 Notes: 1. Measurements at 1980 MHz obtained using demo board described in Figure 1. 2. For NF data, board losses of the input have not been de-embedded. 3. IIP3 test condition: F = 1980 MHz, F = 1981 MHz with input power of -15 dBm per tone. RF1 RF2 4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 2