AH101 Medium Power, High Linearity Amplifier Applications Mobile Infrastructure CATV / DBS Defense / Homeland Security SOT-89 Package Product Features Functional Block Diagram GND 50 1500 MHz 4 +47 dBm Output IP3 13.5 dB Gain +26.5 dBm P1dB MTTF > 1000 Years 1 2 3 Internally Matched RF IN GND RF OUT Single +9 V Supply Lead-free/RoHS-compliant SOT-89 Package General Description Pin Configuration The AH101 is a medium power gain block that offers excellent dynamic range in a low-cost surface mount Pin Function Label package. The combination of a single supply voltage 1 RF IN and an internally matched device makes it ideal for 3 RF OUT both narrow and broadband applications. Only dc blocking and bypass capacitors as well as an RF 2, 4 GND choke are required for operation. Superior thermal design allows the product to achieve +46 dBm IP3 performance at a mounting temperature of +85C with an associated MTTF of greater than 1000 years. The AH101 is available in the environmentally-friendly green/RoHS-compliant SOT- 89 package. The broadband amplifier uses a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. Ordering Information Part No. Description AH101-G Med. Power High Linearity Amplifier AH101-PCB 50-900 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Data Sheet: Rev A 06/01/12 - 1 of 7 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network AH101AH101 Medium Power, High Linearity Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -55 to 150C T -40 +85 C CASE RF Input Power CW, 50,T = 25C +18 dBm DC Voltage, V 7 9 10 V DD 6 DC Voltage +11 V T (for >10 Hours MTTF) 160 C CH Operation of this device outside the parameter ranges Electrical specifications are measured at specified test given above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+9 V, T = +25C, 50 system. DD CASE Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1500 MHz Test Frequency 800 MHz Gain 12 13.5 dB Input Return Loss 20 dB Output Return Loss 15 dB Output P1dB +26.5 dBm Output IP3 Pout= +8 dBm/tone, f= 10 MHz +43 +47 dBm Noise Figure 3.5 dB Supply Voltage, V +9 V DD Operating Current Range 170 200 230 mA Thermal Resistance, R th 25 C/W (junction to base) Device Characterization Data S-Parameter Data Test Conditions: V = +9 V, I = 200 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads DD DS CASE Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -18.92 -60.71 13.78 168.24 -19.25 4.11 -14.51 -160.07 100 -22.31 -52.06 13.63 169.87 -19.13 0.17 -14.86 -177.29 200 -23.85 -47.09 13.50 166.42 -19.17 -5.09 -15.22 164.61 400 -23.32 -62.31 13.48 157.06 -19.28 -12.63 -14.83 140.14 600 -21.73 -77.34 13.32 146.40 -19.36 -19.07 -14.55 118.64 800 -20.76 -90.04 13.19 135.74 -19.47 -25.94 -14.02 97.71 1000 -19.65 -105.39 13.05 124.67 -19.74 -33.10 -13.40 80.17 1200 -18.62 -121.62 12.94 114.96 -20.07 -39.77 -12.95 63.09 1400 -17.32 -131.81 12.76 104.01 -20.36 -45.37 -12.44 47.65 1600 -16.53 -141.33 12.55 93.98 -20.44 -53.24 -12.02 31.14 Data Sheet: Rev A 06/01/12 - 2 of 7 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network