AH420 4W High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH420 is a high dynamic range amplifier in a low-cost 400 2700 MHz surface mount package. The InGaP/GaAs HBT is able to +35.7 dBm P1dB achieve high performance with -49 dBc ACLR and +35.7 dBm of compressed 1dB power, operating off of a single -49 dBc ACLR 26 dBm +5V supply. It is housed in a lead-free/green/RoHS- 14 dB Gain 2140 MHz compliant 4x5mm DFN package. All devices are 100% RF and DC tested. 800 mA Quiescent Current +5 V Single Supply Function Pin No. The AH420 is targeted for use as a final stage amplifier in RF 3,4,5,6 IN MTTF > 100 Years wireless infrastructure repeaters or as driver stages for high RF 7,8,9,10 OUT power amplifiers where high performance is required. In Lead-free/green/RoHS-compliant I 12 REF addition, the amplifier can be used for a wide variety of 12-pin 4x5mm DFN Package V 1 BIAS other applications within the 400 to 2700 MHz frequency NC 2,11 band. By operating off of a single +5V rail, other higher voltage rails are not necessarily needed thus saving system Applications costs. The amplifier also has the flexibility to operate at higher voltage levels to achieve higher compression if Final stage amplifiers for Repeaters needed by the system. High Power Amplifiers Mobile Infrastructure LTE / WCDMA / EDGE / CDMA Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz 400 2700 Frequency MHz 940 1960 2140 Channel Power dBm +27 +27 +26 Test Frequency MHz 2140 Gain dB 16 14.1 14 Output Channel Power dBm +26 Input Return Loss dB 14 19 12 Gain dB 13 14 16 Output Return Loss dB 6.4 7 7.4 Input Return Loss dB 12 (2) ACPR dBc -46.5 -48 -49 Output Return Loss dB 7.4 (2) Output P1dB dBm +35.2 +35.6 +35.7 ACPR dBc -49 Noise Figure dB 6.6 5.3 5.6 Output P1dB dBm +35.7 (4) (4) Output IP3 dBm +50 +49 +50 Output IP3 dBm +50 (3) (3) Quiescent Collector Current Quiescent Collector Current mA 710 800 900 mA 800 Iref Iref mA 20 mA 20 Vcc, Vbias Vcc, Vbias V +5 V +5 1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit. 5. The amplifier has b een tested for ruggedness to be capable of handling: 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB 0.01% Probability, 3.84 MHz BW 10:1 VSWR 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 C 3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when 10:1 VSWR 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 C 10:1 VSWR 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 C the current setting resistor, R4 connected to the Iref pin, is at 82 . 4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Ratings Parameter Rating Storage Temperature -65 to +150 C Ordering Information Vcc, Vbias +14 V Input P9dB RF Input Power, CW, 50 , T=25C Part No. Description Reference Current, Iref 170 mA AH420-EG 4W High Linearity InGaP HBT Amplifier Dissipated Power, Pmax 7 W AH420-EPCB900 920-960 MHz Evaluation Board Max Junction Temperature, T J 158 C 6 For 10 hours MTTF AH420-EPCB1960 1930-1990 MHz Evaluation Board Thermal Resistance, 10.6 C / W JC AH420-EPCB2140 2110-2170 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 500 pieces on a 7 reel. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 8 Aug 2009 AH420 4W High Linearity InGaP HBT Amplifier Application Circuit PC Board Layout Baseplate Configuration Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in Circuit Board Material: 0.014 GETEK, single layer, 1 oz copper, = 4.2, laboratory environments. r Microstrip line details: width = .030, marker spacing = .050 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 8 Aug 2009 Vpd GND GND Vcc