ALM-32220 1.7 GHz 2.7 GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies ALM-32220 is a high linearity 2 Watt Fully matched, input and output PA with good OIP3 performance and exceptionally good High linearity and P1dB PAE at 1dB gain compression point, achieved through the Unconditionally stable across load condition use of Avago Technologies proprietary 0.25 m GaAs En- hancement-mode pHEMT process. Built-in adjustable temperature compensated internal bias circuitry All matching components are fully integrated within the 1 GaAs E-pHEMT Technology module. This makes the ALM-32220 extremely easy to use. The adjustable temperature-compensated internal bias 5V supply circuit allows the device to be operated at either class A Excellent uniformity in product specifications or class AB operation. The ALM-32220 is housed inside a 3 Tape-and-Reel packaging option available miniature 7.0 10.0 1.1 mm 20-lead multiple-chips-on- board (MCOB) module package. MSL-3 and Lead-free High MTTF for base station application Component Image 3 Specifications 7.0 10.0 1.1 mm 20-Lead MCOB Package 2GHz 5V, 800mA (typical) Vctrl Vdd1 18 20 19 14.8 dB Gain 17 1 50.0 dBm Output IP3 16 2 34.4 dBm Output Power at 1dB gain compression 15 3 32220 47.5% PAE at P1dB WWYY 4 14 RF OUT RF IN 3.5dB Noise Figure XXXX 5 13 Applications 6 12 Class A driver amplifier for GSM/PCS/W-CDMA/WiMAX 11 7 Base Stations. 10 9 8 Vdd2 Not Used General purpose gain block. BottBottom Vom Vieieww Top View Note: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated Notes: with conventional depletion mode devices. Package marking provides orientation and identification 2. Good RF practice requires all unused pins to be earthed. 32220 = Device Part Number WWYY = Work week and year of manufacture XXXX = Last 4 digit of lot number Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 200 V ESD Human Body Model = 1000 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. 1 Absolute Maximum Rating T =25C A 2 Thermal Resistance = 14 C/W Absolute jc (Vdd=5, Ids=800mA, Tc=85C) Symbol Parameter Units Max. Notes: V Device Voltage, RF output to ground V 5.5 dd,max 1. Operation of this device in excess of any of I Device Drain Current mA 1500 ds,max these limits may cause permanent damage. 2. Thermal resistance measured using Infra-Red V Control Voltage V 5.5 ctrl,max measurement technique. P CW RF Input Power dBm 28 3. This is limited by maximum Vdd and Ids. in,max Derate 71.4mW/ C for Tc> 34.5 C. 3 P Total Power Dissipation W 8.25 diss T Junction Temperature C 150 j, max T Storage Temperature C -65 to 150 STG 4 Product Consistency Distribution Charts LSL USL LSL Std Dev = 0.038 Std Dev = 0.364 .600 .700 .800 .900 1.000 47 48 49 50 51 52 53 Figure 2. OIP3 LSL = 48dBm, nominal = 50dBm Figure 1. Ids LSL = 640mA, nominal = 800mA, USL = 910mA LSL Std Dev = 0.633 Std Dev = 0.062 40 42 44 46 48 50 52 54 33 33.5 34 34.5 35 Figure 3. P1dB LSL = 33dBm, nominal = 34.4dBm Figure 4. PAE at P1dB nominal = 47.5% LSL USL Std Dev = 0.147 13 13.5 14 14.5 15 15.5 16 16.5 17 Figure 5. Gain LSL=13.5dB, Nominal = 14.8dB, USL=16.8dB Note: 4. Distribution data sample size is 500 samples taken from 3 different wafer lots. T = 25C, Vdd = 5V, Vctrl = 5V, RF performance at 2GHz unless A otherwise specified. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5. Measurements are made on a production test board. Input trace losses have not been de-embedded from actual measurements. 2