AH125 W High Linearity InGaP HBT Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA 3-pin SOT-89 Package Product Features Functional Block Diagram 400 3600 MHz GND +28 dBm P1dB 4 +45 dBm Output IP3 16.2 dB Gain 2140 MHz 150 mA current draw +5 V Single Supply MTTF > 100 Years Lead-free/Green/RoHS-compliant SOT-89 Package 1 2 3 Class 2 HBM ESD rating (>2kV) RF IN GND RF OUT General Description Pin Configuration The AH125 is a high dynamic range driver amplifier in a Pin No. Symbol low-cost surface mount package. The InGaP/GaAs HBT 1 Vbias is able to achieve high performance across a broad range with +45 dBm OIP3 and +28 dBm of compressed 3 RFin 1dB power while drawing 150 mA current. The AH125 is 2,4 RFout/Vcc available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. The AH125 is targeted for use as a driver amplifier in Not Recommended for wireless infrastructure where high linearity, medium power, and high efficiency are required. Internal biasing New Designs allows the AH125 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent Recommended Replacement candidate for transceiver line cards in current and next Part: TQP7M9102 generation multi-carrier 3G base stations or repeaters. Ordering Information Part No. Description AH125-89G W High Linearity Amplifier Standard T/R size = 1000 pieces on a 7 reel. Datasheet: Rev B 05-02-13 - 1 of 14 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com AH125 W High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Case Temperature 40 +85 C 6 RF Input Power, CW, 50, T=25 C Input P dB Tj for >10 hours MTTF +200 C 10 Device Voltage +6 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V =+5 V, I =150 mA (typ.), Temp= +25C, tuned application circuit SUPPLY CQ Parameter Conditions Min Typ Max Units Operational Frequency Range 400 3600 MHz Test Frequency 2140 MHz Gain 14 16.2 18 dB Input Return Loss 12 dB Output Return Loss 12 dB W-CDMA Channel Power At -50dBc ACLR, Note 1 +19 dBm Output P1dB +28 dBm Output IP3 Pout=+12 dBm/tone, f=1 MHz +41 +45 dBm Noise Figure 4.4 dB Quiescent Collector Current 130 150 170 mA Thermal Resistance, Junction to case 64.3 C / W JC Performance Summary Table Test conditions unless otherwise noted: V =+5 V, I =150 mA (typ.), Temp= +25C, tuned application circuit SUPPLY CQ Parameter Conditions Typical Units Frequency 920 1960 2140 MHz Gain 20 17 16.2 dB Input Return Loss 20 16 12 dB Output Return Loss 9.9 9 12 dB W-CDMA Channel Power At -50 dBc ACLR, Note 1 +19 +19 +19 dBm Output P1dB +28.1 +27.8 +28.0 dBm Output IP3 Note 2 +47 +47 +45 dBm Noise Figure 7.7 4.6 4.4 dB Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. 2. OIP3 is measured with two tones separated by 1 MHz. Measured at Pout=+17dBm/tone for 900 MHz, +14 dBm/tone for 1960 MHz, and +12 dBm/tone for 2140 MHz. Datasheet: Rev B 05-02-13 - 2 of 14 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com