X-On Electronics has gained recognition as a prominent supplier of AH31TR-G RF Amplifier across the USA, India, Europe, Australia, and various other global locations. AH31TR-G RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

AH31TR-G Qorvo

AH31TR-G electronic component of Qorvo
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Part No.AH31TR-G
Manufacturer: Qorvo
Category: RF Amplifier
Description: AH31TRG triquint semiconductor amplifier rf integrated circuits ics semiconductors
Datasheet: AH31TR-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 12.3414 ea
Line Total: USD 12341.4

Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 12.3414

   
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Product Category
RoHS - XON
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We are delighted to provide the AH31TR-G from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AH31TR-G and other electronic components in the RF Amplifier category and beyond.

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AH31 High Dynamic Range IF Amplifier Product Features Product Description Functional Diagram GND The AH31 is a high dynamic range amplifier in a low-cost 50 1000 MHz 4 surface-mount package. The combination of low noise 19 dB Gain figure, high gain, and high output IP3 is ideal as an IF +22 dBm P1dB amplifier for receiver and transmitter applications. +42 dBm OIP3 The device combines dependable performance with 1.9 dB Noise Figure consistent quality to maintain MTTF values exceeding 1 23 Single Voltage Supply (+5 V) 1000 years at mounting temperatures of +85 C and is RF IN GND RF OUT available in the environmentally-friendly lead-free/green Lead-free/Green/RoHS- /RoHS-compliant SOT-89 package. All devices are 100% compliant SOT-89 Package Function Pin No. RF & DC tested. Input 1 MTTF > 1000 years Output/Bias 3 The MMIC amplifier based on GaAs MESFET technology Ground 2, 4 can be configured for IF and RF applications with various Applications current and next generation wireless technologies. High linearity and low-noise amplifier following a mixer High performance amplifier in IF path of TX/RX systems (1) (3) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz 50 1000 Frequency MHz 75 170 240 500 900 Test Frequency MHz 240 S21 dB 19.5 19.2 19.3 18.4 16.6 (3) Gain dB S11 dB -21 -13 -19 -13 -14 19 Output P1dB dBm +22 S22 dB -17 -14 -13 -9.2 -9 (2) Output IP3 dBm +37 +42 Output P1dB dBm +22 +21 +22 +21 +20 Supply Voltage V +5 Output IP3 dBm +42 +42 +42 +41 +41 Operating Current Range mA 120 180 Noise Figure dB 2.6 2.3 2.2 1.9 2.2 150 3. Typical parameters reflect performance in an application circuit. 1. Test conditions : T = 25 C, Vdd = +5 V, 50 system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Ordering Information Absolute Maximum Rating Part No. Description Parameter Rating High Dynamic Range IF Amplifier AH31-G Storage Temperature -55 to +150 C (lead-free/green/RoHS-compliant SOT-89 Pkg) DC Voltage +6 V AH31-PCB75 65 85 MHz Fully Assembled Evaluation Board RF Input Power (continuous) 4 dB above Input P1dB AH31-PCB170 155 185 MHz Fully Assembled Evaluation Board Junction Temperature +160 C AH31-PCB240 220 260 MHz Fully Assembled Evaluation Board Thermal Resistance, Rth 59 C / W AH31-PCB500 450 550 MHz Fully Assembled Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 1000 pieces on a 7 reel. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 7 January 2008 AH31 High Dynamic Range IF Amplifier Typical Device Data S-parameters (Vd = +5 V, Id = 150 mA, unmatched 50 system). S11 S22 Gain and Max. Stable Gain Swp Max Swp Max 24 1GHz 1GHz Maximum Stable Gain 22 20 S21 18 16 14 0 0.2 0.4 0.6 0.8 1 Frequency (GHz) Swp Min Swp Min 0.01GHz 0.01GHz Notes: Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads. The amplifier requires a matching network at the input for proper operation. The amplifier is intrinsically well matched at the output and ideally should look into 50 . Any deviation from this can affect the linearity IP3 performance for the device. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 250 1000 MHz, with markers placed at 0.25 1.0 GHz in 0.25 GHz increments. Application Circuit PC Board Layout Circuit Board Material: .014 FR-4, 4 layers (other layers added for rigidity), .062 total thickness, 1 oz copper Microstrip line details: width = .024, spacing = .036 Typical Device Data S-Parameters (V = +5 V, I = 150 mA, T = 25 C, calibrated to device leads) D D Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -2.72 -5.46 17.01 175.91 -28.54 6.89 -7.44 -5.46 100 -2.77 -9.52 16.94 172.89 -28.42 8.53 -7.56 -7.93 200 -2.81 -18.01 16.86 166.99 -27.86 14.09 -7.59 -13.42 300 -2.87 -26.32 16.74 161.33 -27.14 18.38 -7.63 -19.94 400 -2.87 -35.19 16.64 155.16 -26.32 21.01 -7.83 -26.57 500 -2.95 -43.58 16.50 149.45 -25.45 22.42 -7.92 -32.04 600 -2.91 -51.71 16.40 143.72 -24.66 22.73 -8.00 -38.12 700 -2.99 -60.03 16.21 138.07 -23.89 21.29 -8.31 -45.01 800 -3.03 -67.73 16.05 132.16 -23.27 19.94 -8.46 -50.89 900 -3.14 -75.45 15.81 126.99 -22.71 17.74 -8.77 -57.30 1000 -3.22 -82.88 15.55 121.64 -22.17 15.73 -8.95 -63.63 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 7 January 2008 10.0 10.0 -0.2 5.0 -0.2 5.0 4.0 4.0 3 0 . 3.0 -0.4 -0.4 2.0 2.0 -0.6 -0.6 -0.8 -0.8 S21 and MSG (dB) 0 0.2 0.4 0.6 0.8 -1.0 1.0 1.0 2.0 3.0 4.0 5.0 10.0 0 0.2 0.4 0.6 0.8 -1.0 1.0 1.0 2.0 3.0 4.0 5.0 10.0 0.8 0.8 0.6 0.6 -2.0 -2.0 0.4 0.4 -3.0 -3.0 -4.0 -4.0 -5.0 0.2 -5.0 0.2 -10.0 -10.0

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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