ALM-11036
776 MHz 870 MHz
Low Noise, High Linearity Amplifier Module
with Fail-Safe Bypass Feature
Data Sheet
Description Features
Avago Technologies ALM-11036 is an easy-to-use GaAs Very Low Noise Figure
MMIC Tower Mount Amplifier (TMA) LNA Module with low
Good Return Loss
IL bypass path. The module has low noise and high linearity
Low Bypass IL
achieved through the use of Avago Technologies propri-
etary 0.25 mm GaAs Enhancement-mode pHEMT process. Fail-safe Bypass mode
All matching components are fully integrated within the
High linearity performance
module and the 50 ohm RF input and output pins are
High isolation @LNA mode
already internally AC-coupled. This makes the ALM-11036
extremely easy to use as the only external parts are DC Flat gain
supply bypass capacitors. For optimum performance
GaAs E-pHEMT Technology
at other bands, ALM-11136 (870-915 MHz), ALM-11236
Single 5 V power supply
(1710-1850 MHz) and ALM-11336 (1850-1980) are recom-
3
mended. All ALM-11x36 share the same package and pin Compact MCOB package 7.0 x 10.0 x 1.5 mm
out configuration.
MSL2a
Pin Configuration and Package Marking
Specifications
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7.0 x 10.0 x 1.5 mm 36-lead MCOB
849 MHz; 5 V, 92 mA (typical)
15.6 dB Gain
18 dB RL
0.78 dB Noise Figure
21.3 dBm IIP3
4 dBm Input Power at 1 dB gain compression
0.82 dB Bypass IL
Pin Connection
18 dB Bypass RL
4 RF_IN
26 1
23 RF_OUT
50 dB isolation @LNA mode
25 2
24 3 28 EXT_P2
Applications
23 4
30 EXT_P1
22 5
Tower Mount Amplifier (TMA)
21 6
33 Vdd
20 7
Cellular Infrastructure
Others GND
19 8
Attention: Observe precautions for
Note:
handling electrostatic sensitive devices.
Package marking provides orientation and identification
ESD Machine Model = 350 V
11036 = Device Part Number
ESD Human Body Model = 1500 V
WWYY = Work week and Year of manufacture
XXXX = Last 4 digit of Lot number
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
18 27
17 28
16 29
AVAGO
15 30
11036
14 31
13 32 WWYY
12 33 XXXX
11 34
10 35
9 36 [1]
Absolute Maximum Rating T = 25 C
A
[2]
Thermal Resistance
Symbol Parameter Units Absolute Max.
(V = 5.0 V, I = 100 mA) = 83.1 C/W
dd dd jc
V Device Voltage, V 5.5
dd
Notes:
RF output to ground
1. Operation of this device in excess of any of
P CW RF Input Power dBm +15
these limits may cause permanent damage.
in,max
2. Thermal resistance measured using Infra-Red
(V = 5.0 V, I = 100 mA)
dd dd
measurement technique.
[3]
P Total Power Dissipation W 0.715
diss
3. Power dissipation with unit turned on. Board
temperature T is 25 C. Derate at 12.3 mW/C
c
T Junction Temperature C 150
j
for T > 92 C.
C
T Storage Temperature C -65 to 150
STG
[1, 4]
Electrical Specifications
RF performance at T = 25 C, V = 5 V, 849 MHz, measured on demo board in Figure 1 with component listed in Table 1
A dd
for DC bypass.
Symbol Parameter and Test Condition Frequency (MHz) Units Min. Typ. Max.
I Drain Current mA 75 92 107
dd
Gain Gain 776 dB 15.4
849 14.2 15.6 17.2
IRL Input Return Loss, 50 source dB 30
ORL Output Return Loss, 50 load dB 26
[2]
NF Noise Figure 776 dB 0.84
849 0.78 0.95
[3]
IIP3 Input Third Order Intercept Point dBm 18.7 21.3
IP1dB Input Power at 1 dB Gain Compression dBm 2.85 4
Bypass IL Bypass Insertion Loss, 50 load Vdd = 0 V 776 dB 0.7
849 0.82 1.1
Bypass IRL Input Return Loss, 50 source Vdd = 0 V dB 35
Bypass ORL Output Return Loss, 50 load Vdd = 0 V dB 35
ISOL Bypass Isolation @LNA ON Vdd = 5 V dB 54
Notes:
1. Measurements at 849 MHz obtained using demo board described in Figure 1.
2. For NF data, board losses of the input have not been de-embedded.
3. IIP3 test condition: F = 849 MHz, F = 850 MHz with input power of -15 dBm per tone.
RF1 RF2
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2