X-On Electronics has gained recognition as a prominent supplier of AH322-S8G RF Amplifier across the USA, India, Europe, Australia, and various other global locations. AH322-S8G RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

AH322-S8G Qorvo

AH322-S8G electronic component of Qorvo
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Part No.AH322-S8G
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 2W RF AMP 400-2700MHz
Datasheet: AH322-S8G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 20.393
25 : USD 15.2948
100 : USD 11.3281
250 : USD 10.9923
500 : USD 10.5447
1000 : USD 9.9727
2500 : USD 9.5375
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 16.9571
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
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We are delighted to provide the AH322-S8G from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AH322-S8G and other electronic components in the RF Amplifier category and beyond.

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AH322 2W High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH322 is a high dynamic range driver amplifier in a 400 2700 MHz 1 8 low-cost surface mount package. The InGaP/GaAs HBT is +33 dBm P1dB able to achieve high performance for various narrowband- 2 7 tuned application circuits with up to +50 OIP3 and +33 +50 dBm Output IP3 dBm of compressed 1dB power. It is housed in a lead- 13.4 dB Gain 2140 MHz 3 6 free/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. 500 mA Quiescent Current 4 5 +5 V Single Supply The AH322 is targeted for use as a driver amplifier in MTTF > 100 Years wireless infrastructure where high linearity and medium Function Pin No. power is required. The AH322 is ideal for the final stage of Iref 8 Lead-free/RoHS-compliant small repeaters or as driver stages for high power Input 3 SOIC-8 Package amplifiers. In addition, the amplifier can be used for a wide Output / Vcc 6, 7 Vbias 1 variety of other applications within the 400 to 2700 MHz GND Backside Paddle frequency band. Applications GND 2, 4, 5 Final stage amplifiers for Repeaters High Power Amplifiers Mobile Infrastructure LTE / WCDMA / EDGE / CDMA (1) Specifications Typical Performance Units Parameter Units Min Typ Max Parameter Typical Operational Bandwidth MHz 400 2700 Frequency MHz 940 1960 2140 Test Frequency MHz 2140 Gain dB 19.4 14.1 13.4 Gain dB 13.4 Input Return Loss dB 18 11.3 14.7 Input R.L. dB 14.7 Output Return Loss dB 8.5 11.8 7.8 (3) WCDMA Channel Power Output R.L. dB 7.8 dBm +23.6 +24.4 +24.1 -50 dBc ACLR Output P1dB dBm +33 Output P1dB dBm +33.0 +33.3 +33 (2) Output IP3 dBm +50 (2) Output IP3 dBm +47.6 +50.2 +50 (3) WCDMA Channel Power dBm +24.1 Noise Figure dB 8.5 4.5 4.8 -50 dBc ACLR Vcc, Vbias V +5 Noise Figure dB 4.8 Iref mA 30 Vcc, Vbias V +5 (4) Quiescent Collector Current mA 600 500 500 Quiescent Collector Current mA 500 Iref mA 30 1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940 MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz, 1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. 3. 3GPP WCDMA, TM1+64DPCH, 5 MHz Offset, no clipping, PAR = 10.2 dB 0.01% Probability. 4. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6 and 7. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -65 to +150 C RF Input Power, CW, 50 , T = 25C Input P dB 10 Part No. Description Device Voltage, Vcc, Vbias +8 V 2W High Linearity InGaP HBT Amplifier AH322-S8G Device Current 1400 mA (lead-free/RoHS-compliant SOIC-8 Pkg) Device Power 8 W AH322-S8PCB900 920 - 960 MHz Evaluation Board Thermal Resistance, Rth 18.6 C / W AH322-S8PCB1960 1930 - 1990 MHz Evaluation Board Junction Temperature, Tj +200 C AH322-S8PCB2140 2110 - 2170 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Operation of this device above any of these parameters may cause permanent damage TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com April 2009 AH322 2W High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, I = 500 mA, T = 25 C, calibrated to device leads) cq S22 S11 Gain and Maximum Stable Gain Swp Max Swp Max 45 4GHz 4GHz DB(MSG()) DB( S(2,1) ) 40 De emebedded S parameter De emebedded S parameter 35 2.14 GHz 30 2.14 GHz r 0.0838672 r 0.493722 25 x 0.36526 x 0.825153 20 2.14 GHz 2.14 GHz 15 22.7 dB 7.19 dB 10 5 0 -5 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Swp Min Swp Min 0.01GHz 0.01GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, DB (S (2, 1) . For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the blue line DB (GMAX) . The impedance plots are shown from 0.01 4 GHz, with markers placed in 0.5 GHz increments. S-Parameters (V = +5 V, I = 500 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) cc cq Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -0.74 -174.58 29.75 109.51 -43.47 25.51 -1.15 -135.3 100 -0.53 -179.31 24.21 98.59 -43.22 17.83 -1.22 -157.31 200 -0.45 176.71 18.46 89.55 -42.49 8.135 -1.19 -170.3 400 -0.44 170.07 12.77 80.82 -42.04 5.31 -1.22 -178.39 600 -0.56 163.11 9.78 73.71 -41.41 10.52 -1.18 176.07 700 -0.61 159.9 8.73 69.49 -41.21 11.31 -1.12 173.93 800 -0.64 156.03 7.94 65.68 -40.26 12.5 -1.17 171.69 1000 -0.78 147.66 6.8 56.95 -39.65 7.88 -1.22 166.82 1200 -0.87 138.49 6.11 46.99 -38.34 2.45 -1.26 162.15 1400 -1.08 128.32 5.8 36.79 -37.99 -3.1 -1.33 157.29 1600 -1.4 117.39 5.83 25.05 -37.52 -14.57 -1.49 152.31 1800 -1.94 106.19 6.17 10.83 -37.39 -27.07 -1.46 147.31 2000 -3.2 95.9 6.8 -7.89 -37.45 -42.22 -1.41 143.05 2200 -5.84 94.01 7.36 -33.75 -38.56 -69.38 -1.21 138.4 2400 -6.52 112.96 6.5 -64.88 -41.93 -115.31 -0.9 133.24 2600 -4.45 121.06 4.77 -92.83 -41.83 167.17 -0.4 126.56 2800 -2.44 117.78 2.24 -121.06 -38.13 103.07 -0.27 119.41 3000 -1.26 108.49 -1.12 -142.85 -34.99 62.15 -0.35 112.36 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014 Getek, = 4.0, 4 total layers (0.062 thick) for mechanical rigidity r 1 oz copper, Microstrip line details: width = .026, spacing = .026 The silk screen markers A, B, C, etc. and 1, 2, 3, etc. are used as placemarkers for the input and output tuning shunt capacitors C8, C5 and C2. The markers and vias are spaced in .050 increments TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com April 2009 10.0 . 10 0 .0 -0.2 5 5.0 -0.2 4.0 4.0 3.0 3.0 -0.4 -0.4 2.0 2.0 -0.6 -0.6 -0.8 -0.8 0 0.2 0.4 0.6 0.8 -1.0 1.0 1.0 2.0 3.0 4.0 5.0 10.0 0 0.2 0.4 0.6 0.8 -1.0 1.0 1.0 2.0 3.0 4.0 5.0 10.0 0.8 0.8 0.6 0.6 -2.0 -2.0 0.4 0.4 -3.0 -3.0 -4.0 -4.0 5. - 0 0.2 -5.0 0.2 -10.0 -10.0

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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