AH128 W High Linearity InGaP HBT Amplifier Applications Repeaters Mobile Infrastructure WiMAX / WiBro LTE / WCDMA / EDGE / CDMA Product Features 3 Pin SOT-89 Package 60 3500MHz +25dBm P1dB +40dBm Output IP3 Functional Block Diagram 16.9 dB Gain at 2140MHz 115mA current draw Backside Paddle - GND +5V Single Supply MTTF > 100 Years Lead-free/Green/RoHS-compliant SOT-89 Package Product Description 1 2 3 The AH128 is a high dynamic range driver amplifier in a RF IN GND RF OUT / V low-cost surface mount package. The InGaP/GaAs HBT CC is able to achieve high performance across a broad range with +40 dBm OIP3 and +25 dBm of compressed 1dB power while drawing 115 mA current. The AH128 is Pin Configuration available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. Pin No. Label 1 RF IN The AH128 is targeted for use as a driver amplifier in 3 RF OUT/V CC wireless infrastructure where high linearity, medium 2 GND power, and high efficiency are required. Internal biasing Backside Paddle GND allows the AH128 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Ordering Information Part No. Description AH128-89G W High Linearity InGaP HBT Amplifier Standard T/R size = 1000 pieces on a 7 reel Datasheet: Rev. B 02-25-16 - 1 of 17 - Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com AH128-89GAH128 W High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Case Temperature 40 +85 C RF Input Power, CW, 50, T=25 C Input P dB Device Voltage (V ) +3.0 +5.0 +5.25 V CC 10 6 Device Voltage +6 V Tj for >10 hours MTTF +200 C Operation of this device outside the parameter ranges Electrical specifications are measured at specified test given above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+5 V, I =115 mA (typ.), Temp= +25C, tuned application circuit SUPPLY CQ (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 60 3500 MHz Test Frequency 2140 MHz Gain 14.5 16.9 18 dB Input Return Loss 15 dB Output Return Loss 11 dB (2) W-CDMA Channel Power 50 dBc ACLR +15 dBm Output P1dB +25 dBm Output IP3 Pout=+10dBm/tone, f=1MHz +36 +40 dBm Noise Figure 4.6 dB Quiescent Collector Current 95 115 130 mA Thermal Resistance, jc Junction to case 116 C/W Typical Performance Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25C, tuned application circuit (1) Parameter Conditions Typical Units Frequency 920 1960 2140 MHz Gain 19.7 17.6 16.9 dB Input Return Loss 12 15 15 dB Output Return Loss 8.2 11 11 dB W-CDMA Channel Power 50 dBc ACLR, Note 2 +15 +15.5 +15 dBm Output P1dB +24.7 +25.5 +25 dBm Output IP3 f=1MHz, Note 3 +40 +40 +40 dBm Noise Figure 4.6 4.6 4.6 dB Notes: 1. Test conditions unless otherwise noted: V =+5V, Temp=+25C, 50 system. CC 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB 0.01% Probability, 3.84 MHz BW 3. P = +13 dBm/tone for 920 MHz, +11 dBm/tone for 1960 MHz and +10 dBm/tone for 2140 MHz. OUT Datasheet: Rev. B 02-25-16 - 2 of 17 - Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com