AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Applications Small Cells / Repeaters / DAS 3G / 4G Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA 14 Pin 5x6 mm DFN Package Product Features Functional Block Diagram Pin 1 Reference Mark 700-2900 MHz +39 dBm P1dB +12 V Supply Voltage PIN Vbias 1 14 PIN Vpd -50 dBc ACLR 28dBm Pout ACTIVE NC 2 13 NC 1.5% EVM 30 dBm Pout BIAS NC NC 3 12 13 dB Gain 2.6GHz RFin 11 RFout/ Vcc 4 RFin 5 10 Rfout/ Vcc Fast Shut-Down Capability 6 9 RFin Rfout/ Vcc Internal Active Bias and Temp Compensation 8 NC 7 NC Lead-free / RoHS-compliant Backside Paddle - RF/DC GND General Description Pin Configuration The AP561 is a high dynamic range broadband power Pin No. Label amplifier in a surface mount package. The single-stage 1 PIN V BIAS amplifier has 13 dB Gain, while being able to achieve 2, 3, 7, 8, 12, 13 N/C high performance for 0.72.9 GHz applications with up 4, 5, 6 RF IN to +39 dBm of compressed 1dB power. 9, 10, 11 RF Output / V CC 14 PIN V The AP561 uses a high reliability +12V InGaP/GaAs PD HBT process technology. The device incorporates Backside paddle RF / DC GND proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage an internal active bias allows the AP561 to operate directly off a commonly used +12V supply and has the added feature of a +5V power down control pin. RoHS-compliant 5x6mm DFN package is surface mountable to allow for low manufacturing costs to the end user. Ordering Information Part No. Description AP561-F 0.7-2.9 GHz 12V 8W Power Amplifier AP561-PCB900 869-894 MHz Evaluation Board AP561-PCB2140 2110-2170 MHz Evaluation Board AP561-PCB2500 2.5-2.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet: Rev B 09-17-13 Disclaimer: Subject to change without notice - 1 of 17 - 2013 TriQuint www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Supply Voltage (V ) 12.0 V CC RF Input Power, CW, 50 , T=25C +33 dBm T 40 +85 C CASE 6 Supply Voltage (V ) +15 V Tj for >10 hours MTTF 158 C CC BV +35 V Electrical specifications are measured at specified test conditions. cbo Specifications are not guaranteed over all recommended Power Dissipation 14 W operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V =+12V, V =+5V, Temp= +25C, using AP561-PCB2600 application circuit CC PD Parameter Conditions Min Typ Max Units Operational Frequency Range 700 2900 MHz Test Frequency 2600 MHz Output Channel Power +30 dBm Gain dB 13.0 Input Return Loss 14.5 dB Output Return Loss 6.5 dB Error Vector Magnitude See note 1. 1.7 % Collector Efficiency % 16.2 RF Switching Speed See note 2. 50 ns Output P1dB +39 dBm Operating Current, I 510 mA CC Quiescent Current, I 300 mA CQ Reference Current, I mA 10 REF Thermal Resistance, Module (junction to case) 6.0 C/W jc Notes: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR 0.01%. 2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off). Datasheet: Rev B 09-17-13 Disclaimer: Subject to change without notice - 2 of 17 - 2013 TriQuint www.triquint.com