QPA4563C 50 MHz4000MHz Active Bias Cascadable SiGe HBT Amplifier General Description RFMDs QPA4563C is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the QPA4563C does not require a dropping resistor as compared to typical Darlington amplifiers. The QPA4563C is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. 6 Lead SOT-363 Package Product Features Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB=+15.2dBm at 1950MHz OIP3=+27.8dBm at 1950MHz Robust 2000V ESD, Class 2 HBM Functional Block Diagram Applications Instrumentation Repeaters Boosters PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Top View Ordering Information Part No. Description QPA4563CTR7 3000 pieces on a 7 reel (standard) QPA4563CSQ 25 Piece Sample Bag QPA4563CSR 100 Pieces on 7 Reel QPA4563CPCK401 850MHz, EVB with 5 Piece Sample Bag Datasheet, April 13, 2018 Subject to change without notice 1 of 7 www.qorvo.com QPA4563C 50 MHz 4000MHz Active Bias Cascadable SiGe HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temp 55 to +150C Operating Temperature 40 +105 C Device Voltage (V ) +4 V Junction Temperature (T ) +125 C D J Device Current (ID) 110 mA Device Operating Voltage +3.0 V (1) RF Input Power +12 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Notes: 1. ZL to 10:1 VSWR Electrical Specifications Parameter Conditions Min Typ Max Units 850 MHz 20.0 23.6 dB Small Signal Gain 1950 MHz 17.5 21.1 dB 2400 MHz 19.8 dB 850 MHz +15.8 dBm Output Power at 1dB Compression 1950 MHz +13.0 +15.2 dBm 2400 MHz +14.6 dBm 850 MHz +29.0 dBm Output Third Intercept Point 1950 MHz +25.0 +27.8 dBm 2400 MHz +26.6 dBm Input Return Loss 1950 MHz 16.3 dB Output Return Loss 1950 MHz 15.4 dB Noise Figure 1950 MHz 2.5 4.0 dB Device Operating Current 48 60 mA Thermal Resistance, jc 126 C/W Notes: 1. Test conditions unless otherwise noted: V = +3V, I = 48mA Typ., OIP3 Tone Spacing=1MHz, P per tone = 0dBm, 50 system, S D OUT Temp=+25C Datasheet, April 13, 2018 Subject to change without notice 2 of 7 www.qorvo.com