X-On Electronics has gained recognition as a prominent supplier of ECG055B-G RF Amplifier across the USA, India, Europe, Australia, and various other global locations. ECG055B-G RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

ECG055B-G Qorvo

ECG055B-G electronic component of Qorvo
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See Product Specifications
Part No.ECG055B-G
Manufacturer: Qorvo
Category: RF Amplifier
Description: TriQuint (Qorvo) RF Amplifier DC-3 GHz 20.5dB Gain1 GHz
Datasheet: ECG055B-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.0013
25 : USD 3.0613
100 : USD 2.3863
250 : USD 1.9766
500 : USD 1.7717
1000 : USD 1.5547
2500 : USD 1.4101
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
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We are delighted to provide the ECG055B-G from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECG055B-G and other electronic components in the RF Amplifier category and beyond.

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ECG055B-G InGaP HBT Gain Block Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment SOT-89 Package Style General Purpose Wireless Product Features Functional Block Diagram DC 6 GHz +18 dBm P1dB at 1 GHz +34 dBm OIP3 at 1 GHz 20.5 dB Gain at 1 GHz 3.4 dB Noise Figure Available in Lead-free/SOT-89 Package Style Internally matched to 50 General Description Pin Configuration The ECG055B-G is a general-purpose buffer amplifier Pin No. Label that offers high dynamic range in a low-cost surface- 1 RF IN mount package. At 1000MHz, the ECG055B-G typically 2 GND provides 20.5 dB of gain, +34 dBm Output IP3, and 3 RF OUT /VCC +18 dBm P1dB. Backside Paddle GND The ECG055B-G consists of Darlington pair amplifiers using the high reliability InGaP /GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free /RoHS-compliant SOT-89 packages. A SOT-86 version is also available as the ECG055C. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W- CDMA. In addition, the ECG055B-G will work for other Ordering Information various applications within the DC to 6GHz frequency range such as CATV and mobile wireless. Part No. Description ECG055B-G InGaP HBT Gain Block Standard T/R size = 1000 pieces on a 7 reel Datasheet: Rev B 12/07/14 Disclaimer: Subject to change without notice - 1 of 7 - 2014 TriQuint www.triquint.com ECG055B-G InGaP HBT Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150 C T 40 +85 C CASE RF Input Power (Continuous) +12 dBm Junction Temperature +160 C Device Current 150 mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V = +6V, R = 18, Temp.=+25C, 50 System SUPPLY BIAS Parameter Conditions Min Typ Max Units Operational Bandwidth DC 6000 MHz Gain 20.5 dB Freq.=1000 MHz Output P1dB +18 dBm Pout=+4 dBm/Tone, f= 1 MHz Output IP3 +34 dBm Gain 19.3 20.1 21 dB Input Return Loss 20 dB Output Return Loss 12.5 dB Freq.=2000 MHz Pout=+4 dBm/Tone, f= 1 MHz Output P1dB +18 dBm Output IP3 +30 +32 dBm Noise Figure 3.4 4 dB Device Voltage +4.2 +4.8 +5.3 V Device Current 65 mA Thermal Resistance 128 C /W (1) Typical Device RF Performance Test conditions unless otherwise noted: VSUPPLY = +6V, ICC = 65 mA (typ.), RBIAS = 18, Temp.=+25C, 50 System Parameter Typical Units Frequency 100 500 900 1900 2140 2400 3500 5800 MHz Gain 20.7 20.6 20.5 20.1 20.1 19.9 19.3 17.2 dB Input Return Loss 36 31 26.3 19.7 18.5 17.5 14 8.9 dB Output Return Loss 27 23 19.1 12.9 12.2 11 8.1 4.1 dB Output P1dB +18.2 +18 +18.1 +18.2 +17.8 +17.8 +17.2 dBm (2) Output IP3 +33 +33.5 +34.5 +33.5 +32.9 +32 dBm Noise Figure 3.4 3.6 3.4 3.4 3.4 3.8 dB Notes: 1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level. Application specific performance values will differ in accordance with external components selected for the desired frequency band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4. 2. Pout= +4 dBm/ tone, 1MHz tone spacing. Datasheet: Rev B 12/07/14 Disclaimer: Subject to change without notice - 2 of 7 - 2014 TriQuint www.triquint.com

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