ECG055B-G
InGaP HBT Gain Block
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
SOT-89 Package Style
General Purpose Wireless
Product Features Functional Block Diagram
DC 6 GHz
+18 dBm P1dB at 1 GHz
+34 dBm OIP3 at 1 GHz
20.5 dB Gain at 1 GHz
3.4 dB Noise Figure
Available in Lead-free/SOT-89 Package Style
Internally matched to 50
General Description Pin Configuration
The ECG055B-G is a general-purpose buffer amplifier
Pin No. Label
that offers high dynamic range in a low-cost surface-
1 RF IN
mount package. At 1000MHz, the ECG055B-G typically
2 GND
provides 20.5 dB of gain, +34 dBm Output IP3, and
3 RF OUT /VCC
+18 dBm P1dB.
Backside Paddle GND
The ECG055B-G consists of Darlington pair amplifiers
using the high reliability InGaP /GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in low-cost, surface-mountable plastic
lead-free /RoHS-compliant SOT-89 packages. A
SOT-86 version is also available as the ECG055C. All
devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies such as GPRS, GSM, CDMA, and W-
CDMA. In addition, the ECG055B-G will work for other
Ordering Information
various applications within the DC to 6GHz frequency
range such as CATV and mobile wireless. Part No. Description
ECG055B-G InGaP HBT Gain Block
Standard T/R size = 1000 pieces on a 7 reel
Datasheet: Rev B 12/07/14 Disclaimer: Subject to change without notice
- 1 of 7 -
2014 TriQuint
www.triquint.com
ECG055B-G
InGaP HBT Gain Block
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Rating Parameter Min Typ Max Units
Storage Temperature 65 to 150 C T 40 +85 C
CASE
RF Input Power (Continuous) +12 dBm Junction Temperature +160 C
Device Current 150 mA Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
Operation of this device outside the parameter ranges
recommended operating conditions.
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: V = +6V, R = 18, Temp.=+25C, 50 System
SUPPLY BIAS
Parameter Conditions Min Typ Max Units
Operational Bandwidth DC 6000 MHz
Gain 20.5 dB
Freq.=1000 MHz
Output P1dB +18 dBm
Pout=+4 dBm/Tone, f= 1 MHz
Output IP3 +34 dBm
Gain 19.3 20.1 21 dB
Input Return Loss 20 dB
Output Return Loss 12.5 dB
Freq.=2000 MHz
Pout=+4 dBm/Tone, f= 1 MHz
Output P1dB +18 dBm
Output IP3 +30 +32 dBm
Noise Figure 3.4 4 dB
Device Voltage +4.2 +4.8 +5.3 V
Device Current 65 mA
Thermal Resistance 128 C /W
(1)
Typical Device RF Performance
Test conditions unless otherwise noted: VSUPPLY = +6V, ICC = 65 mA (typ.), RBIAS = 18, Temp.=+25C, 50 System
Parameter Typical Units
Frequency 100 500 900 1900 2140 2400 3500 5800 MHz
Gain 20.7 20.6 20.5 20.1 20.1 19.9 19.3 17.2 dB
Input Return Loss 36 31 26.3 19.7 18.5 17.5 14 8.9 dB
Output Return Loss 27 23 19.1 12.9 12.2 11 8.1 4.1 dB
Output P1dB +18.2 +18 +18.1 +18.2 +17.8 +17.8 +17.2 dBm
(2)
Output IP3 +33 +33.5 +34.5 +33.5 +32.9 +32 dBm
Noise Figure 3.4 3.6 3.4 3.4 3.4 3.8 dB
Notes:
1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level.
Application specific performance values will differ in accordance with external components selected for the desired frequency
band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.
2. Pout= +4 dBm/ tone, 1MHz tone spacing.
Datasheet: Rev B 12/07/14 Disclaimer: Subject to change without notice
- 2 of 7 -
2014 TriQuint
www.triquint.com