53X
AVT-53663
DC 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description Features
Avago Technologies AVT-53663 is an economical, easy- Small signal gain amplifi er
to-use, general purpose InGaP HBT MMIC gain block
Operating frequency DC to 6 GHz
amplifi er utilizing Darlington pair confi guration housed in
Unconditionally stable
a 6-lead (SOT-363) surface mount plastic package.
50 Ohm input & output
The Darlington feedback structure provides inherent
Flat, Broadband Frequency Response up to 2 GHz
broad bandwidth performance, resulting in useful
operating frequency up to 6 GHz. This is an ideal device
Industry standard SOT-363
for small-signal gain cascades or IF amplifi cation.
Lead-free, RoHS compliant, Green
AVT-53663 is fabricated using advanced InGaP HBT
Specifi cations
(Hetero-junction Bipolar Transistor) technology that off ers
state-of-the-art reliability, temperature stability and per-
2 GHz, 5V Vcc, 48mA (typical)
formance consistency.
19.5 dB Gain
15.1 dBm P1dB
Component Image
26.5 dBm OIP3
Notes:
3.2 dB NF
Output
Package marking provides
GND
& V
d
orientation and identifi cation
10 dB IRL and ORL
53 = Device Code
GND GND
X = Month of Manufacture
Applications
= Pin 1
Input GND
Cellular / PCS / 3G base station
Wireless Data / WLAN
Top View
WiMAX / WiBRO
CATV & Cable modem
Typical Biasing Confi guration
ISM
V = 5V
CC
C
byp C
R byp
bias
R = (V - V )/I
bias CC d d
Attention: Observe precautions for
C
block
Pin 6
handling electrostatic sensitive devices.
RFin RFout
ESD Machine Model = 160 V
V
d
Pin 3
C
block
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R:
Pin 1, 2, 4, 5
Electrostatic Discharge, Damage and Control.
(GND)[1]
Absolute Maximum Rating T =25C Thermal Resistance
A
[2]
Symbol Parameter Units Absolute Max.
Thermal Resistance = 184C/W
jc
(I = 48 mA, T = 85C)
I Device Current mA 80 d c
d
Notes:
P CW RF Input Power dBm 18
IN,MAX
1. Operation of this device in excess of any of
[3]
P Total Power Dissipation mW 327
DISS these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
T Operating Temperature C -40 to 85
OPT
measurement technique.
T Junction Temperature C 150
J,MAX 3. Ground lead temperature is 25C. Derate
5.5mW/C for T >90C.
c
T Storage Temperature C -65 to 150
STG
[1]
Electrical Specifi cations
T = 25C, Zo = 50 , V = 5 V, R = 22 , P = -15 dBm (unless specifi ed otherwise)
A CC bias in
Symbol Parameter and Test Condition Frequency Units Min. Typ. Max.
I Device Current mA 44.0 47.6 51.0
d
Gp Power Gain 900 MHz dB 21.8
2000 MHz 18.0 19.5 21.0
[2] rd
OIP3 Output 3 Intercept Point 900 MHz dBm 28.9
2000 MHz 25.0 26.5
S11 Input Return Loss, 50 source 900 MHz dB -16.5
2000 MHz -12.0
S22 Output Return Loss, 50 load 900MHz dB -17.3
2000 MHz -13.4
S12 Reverse Isolation 900 MHz dB -24.3
2000 MHz -24.7
P1dB Output Power at 1dB Gain Compression 900 MHz dBm 16.0
2000 MHz 15.1
NF Noise Figure 900 MHz dB 2.9
2000 MHz 3.2
Notes:
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: F - F = 10MHz with input power of -23 dBm per tone measured at worse side band.
RF1 RF2
2