MW4IC915N
FreescaleSemiconductor
Rev. 8, 3/2011
TechnicalData
RFLDMOSWidebandIntegrated
PowerAmplifiers
MW4IC915NBR1
The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
MW4IC915GNBR1
and GSM EDGE base station applications. It uses Freescales newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi--stage
structure.ItswidebandOn--Chipdesignmakesitusablefrom750to1000MHz.
Thelinearityperformancescoverallmodulationsforcellularapplications:GSM,
GSM EDGE, TDMA, N--CDMAandW--CDMA.
860 -- 960MHz,15W,26V
FinalApplication
GSM/GSMEDGE,N--CDMA
TypicalPerformance: V =26Volts,I =60mA,I = 240mA,
DD DQ1 DQ2 RFLDMOSWIDEBAND
P = 15Watts CW, FullFrequency Band(860--960MHz)
out
INTEGRATEDPOWERAMPLIFIERS
Power Gain 30dB
Power AddedEfficiency 44%
DriverApplication
TypicalGSM/GSM EDGE Performances: V =26Volts,I =60mA,
DD DQ1
I = 240mA, P = 3Watts Avg., FullFrequency Band(869--894MHz
DQ2 out
and921--960MHz)
Power Gain 31dB
Power AddedEfficiency 19%
SpectralRegrowth@ 400kHz Offset = --65dBc
CASE1329--09
SpectralRegrowth@ 600kHz Offset = --83dBc
TO--272WB--16
EVM 1.5%
PLASTIC
Capableof Handling5:1VSWR, @26Vdc, 921MHz, 15Watts CW
MW4IC915NBR1
Output Power
Features
CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters
On--ChipMatching(50Ohm Input, DC Blocked, >3Ohm Output)
IntegratedQuiescent Current TemperatureCompensationwith
Enable/DisableFunction
(1)
On--ChipCurrent Mirror g ReferenceFET for Self BiasingApplication
m
CASE1329A--04
IntegratedESD Protection
TO--272WB--16GULL
200C CapablePlastic Package
PLASTIC
N Suffix Indicates Lead--FreeTerminations. RoHS Compliant.
MW4IC915GNBR1
InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel.
V
RD2
GND
1
GND
16
V
RG2 V
RD2 2
15 NC
V
3
RG2
V
DS1 4
V
DS1
V
5
RD1
RF
out/
RF
in 6 14
V
DS2
RF V /RF
in DS2 out
V
RG1
7
V
GS1 8
V
RD1
V
GS2 9
V NC 10 13 NC
RG1
GND GND
12
11
(TopView)
V
GS1
QuiescentCurrent
TemperatureCompensation
V
Note: Exposed backside flag is source
GS2
terminalfortransistors.
Figure1.FunctionalBlockDiagram Figure2.PinConnections
1. RefertoAN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. GotoTable1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5.+65 Vdc
DSS
Gate--SourceVoltage V --0.5.+15 Vdc
GS
StorageTemperatureRange T --65to+175 C
stg
OperatingJunctionTemperature T 200 C
J
Table2.ThermalCharacteristics
(1)
Characteristic Symbol Value Unit
ThermalResistance,JunctiontoCase R C/W
JC
GSM Application Stage1,26Vdc,I =60mA 7.3
DQ
(P =15W CW) Stage2,26Vdc,I =240mA 1.7
out DQ
GSM EDGE Application Stage1,26Vdc,I =60mA 7.3
DQ
(P =7.5W CW) Stage2,26Vdc,I =240mA 1.8
out DQ
CDMA Application Stage1,26Vdc,I =60mA 7.4
DQ
(P =3.75W CW) Stage2,26Vdc,I =240mA 1.9
out DQ
Table3.ESDProtectionCharacteristics
TestConditions Class
HumanBody Model 1(Minimum)
MachineModel M3 (Minimum)
ChargeDeviceModel C2 (Minimum)
Table4.MoistureSensitivityLevel
TestMethodology Rating PackagePeakTemperature Unit
PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C
Table5.ElectricalCharacteristics (T =25C unless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
FunctionalTests(InFreescaleTestFixture,50ohm system)V =26Vdc,I =90mA,I =240mA,P =15W PEP,
DS DQ1 DQ2 out
f1=960MHz andf2= 960.1MHz,Two--Tone
PowerGain G 29 31 dB
ps
PowerAddedEfficiency PAE 29 31 %
IntermodulationDistortion IMD --40 --29 dBc
InputReturnLoss IRL --15 --10 dB
1. RefertoAN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Goto