Document Number: MW5IC970N Freescale Semiconductor Rev. 3, 1/2010 Technical Data RF LDMOS Wideband 2-Stage MW5IC970NBR1 Power Amplifiers MW5IC970GNBR1 Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment. These devices have a 800-900 MHz, 70 W, 28 V 2-stage design with off-chip matching for the input, interstage and output RF LDMOS WIDEBAND networks to cover the desired frequency band. 2-ST AGE POWER AMPLIFIERS Typical Performance: 800 MHz, 28 Volts, I = 80 mA, DQ1 I = 650 mA, P = 70 Watts PEP DQ2 out Power Gain 30 dB Drain Efficiency 48% Capable of Handling 10:1 VSWR, 28 Vdc, 850 MHz, 70 Watts CW Output Power Features CASE 1329-09 TO-272 WB-16 Characterized with Series Equivalent Large-Signal Impedance Parameters PLASTIC Integrated Quiescent Current Temperature Compensation MW5IC970NBR1 with Enable/Disable Function (1) On-Chip Current Mirror g Reference FET for Self Biasing Application m Integrated ESD Protection 200C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1329A-04 TO-272 WB-16 GULL PLASTIC MW5IC970GNBR1 V RD2 GND 1 16 GND Quiescent Current V V /V RD2 2 RG2 GS2 NC (1) 15 Temperature Compensation V /V RG2 GS2 3 V /V 4 RG1 GS1 RF 5 in1 V /V RG1 GS1 V D2/ GND 6 14 RF out2 V RD1 7 RF V /RF V /RF in1 8 D2 out2 D1 out1 V /RF 9 D1 out1 NC 10 13 V RF RD1 in2 12 GND 11 GND V /RF D1 out1 V /RF (Top View) D1 out1 RF in2 Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V - 0.5, + 65 Vdc DSS Gate-Source Voltage V - 0.5, + 15 Vdc GS Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Final Application Stage 1, 28 Vdc, I = 80 mA 5.2 DQ (P = 70 W CW) Stage 2, 28 Vdc, I = 650 mA 0.8 out DQ EDGE Application Stage 1, 28 Vdc, I = 80 mA 5.3 DQ (P = 35 W CW) Stage 2, 28 Vdc, I = 650 mA 0.8 out DQ Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1A (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28.5 Vdc, I = 80 mA, I = 650 mA, P = 70 W PEP, DD DQ1 DQ2 out f1 = 870.0 MHz, f2 = 870.1 MHz Power Gain G 26.5 30 34.5 dB ps Drain Efficiency 40 48 % D Input Return Loss IRL -12 -10 dB Intermodulation Distortion IMD -33 -28 dBc Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) V = 28 Vdc, I = 80 mA, I = DD DQ1 DQ2 650 mA, 740-870 MHz, 870-960 MHz Gain Flatness in 30 MHz Bandwidth P = 70 W CW G 2 dB out F Gain Flatness in 30 MHz Instantaneous Bandwidth G 0.2 dB F P = 70 W CW out Delay P = 70 W CW Including Output Matching Delay 4.5 ns out Part-to-Part Phase Variation P = 70 W CW 15 out 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to