DocumentNumber:MW6IC1940N--1 FreescaleSemiconductor Rev. 3.1, 12/2009 Technical Data RFLDMOSWidebandIntegrated PowerAmplifier MW6IC1940GNBR1 TheMW6IC1940GNBwidebandintegratedcircuitisdesignedwithon--chip matching that makes it usable from 1920 to 2000 MHz. This multi--stage structureisratedfor26to32Voltoperationandcoversalltypicalcellularbase station modulation formats. FinalApplication 1920--2000MHz,40W,28V 2xW--CDMA Typical 2--Carrier W--CDMA Performance: V =28Volts,I = 200 mA, DD DQ1 I = 440 mA, P = 4.5Watts Avg., f = 1922.5MHz, Channel Bandwidth= RFLDMOSWIDEBAND DQ2 out 3.84MHz, PAR = 8.5dB 0.01%Probability onCCDF. INTEGRATEDPOWERAMPLIFIER Power Gain 28.5 dB Power Added Efficiency 13.5% IM3 10MHz Offset --43dBc in3.84MHz Bandwidth ACPR 5MHz Offset --46dBc in3.84MHz Bandwidth DriverApplications Typical 2--Carrier W--CDMA Performance: V =28Volts,I = 200 mA, DD DQ1 I = 350 mA, P = 26 dBm, Full Frequency Band (1920--2000 MHz), DQ2 out Channel Bandwidth= 3.84MHz, PAR = 8.5dB 0.01% Probability on CCDF. Power Gain 27 dB IM3 10MHz Offset --59dBc in3.84MHz Bandwidth ACPR 5MHz Offset --62dBc in3.84MHz Bandwidth Capableof Handling3:1VSWR, 28Vdc, 1960MHz, 40Watts CW Output Power CASE1329A--04 Stableintoa3:1VSWR. All Spurs Below --60dBc 100mW to20W CW TO--272WB--16GULL . P PLASTIC out Features CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceScatteringParameters On--ChipMatching(50Ohm Input, DC Blocked, >3Ohm Output) IntegratedQuiescent Current TemperatureCompensation (1) withEnable/DisableFunction IntegratedESD Protection 225C Capable Plastic Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications RoHSCompliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. GND 1 16 GND V 2 DS1 15 NC NC 3 NC 4 V DS1 NC 5 RF / out RF 6 14 in RF RF /V in out DS2 V DS2 7 NC V 8 GS1 V 9 V GS2 GS1 QuiescentCurrent 10 13 NC V (1) DS1 V TemperatureCompensation GS2 12 GND 11 GND V DS1 (Top View) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +68 Vdc DSS Gate--Source Voltage V --0.5, +6 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Input Power P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC W--CDMA Application Stage 1, 28 Vdc, I =200 mA 2.1 DQ1 (P =4.5W Avg.) Stage2, 28Vdc, I =440 mA 1.2 out DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B (Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit FunctionalTests (In Freescale Wideband 1920--2000 MHz Test Fixture, 50 ohm system) V =28Vdc,I = 200 mA, I = 440 mA, DD DQ1 DQ2 P = 4.5 W Avg., f1 = 1922.5 MHz, f2 = 1932.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 5 MHz Offset. IM3 measured in out 3.84 MHz Channel Bandwidth 10 MHz Offset. PAR = 8.5 dB 0.01% Probability on CCDF. PowerGain G 26 28.5 31.5 dB ps PowerAdded Efficiency PAE 12.5 13.5 % Intermodulation Distortion IM3 --43 --40 dBc Adjacent ChannelPowerRatio ACPR --46 --43 dBc Input Return Loss IRL --15 --10 dB 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at