Document Number: MW7IC2240N Freescale Semiconductor Rev. 1, 6/2011 Technical Data RF LDMOS Wideband Integrated MW7IC2240NR1 Power Amplifiers MW7IC2240GNR1 The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage MW7IC2240NBR1 structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. Typical Performance 2110--2170 MHz, 4 W Avg., 28 V Typical Single--Carrier W--CDMA Performance: V =28Volts, DD I =90mA, I = 420 mA, P = 4 Watts Avg., f = 2112.5 MHz, SINGLE W--CDMA DQ1 DQ2 out IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB RF LDMOS WIDEBAND 0.01% Probability on CCDF. INTEGRATED POWER AMPLIFIERS Power Gain 30 dB Power Added Efficiency 14% ACPR 5 MHz Offset --50 dBc in 3.84 MHz Bandwidth CASE 1886--01 Capable of Handling 5:1 VSWR, 28 Vdc, 2140 MHz, 40 Watts CW TO--270 WB--16 Output Power PLASTIC P 1 dB Compression Point 40 Watts CW out MW7IC2240NR1 Stable into a 5:1 VSWR. All Spurs Below --60 dBc 100 mW to 10 Watts CW P . out Features CASE 1887--01 Characterized with Series Equivalent Large--Signal Impedance Parameters TO--270 WB--16 GULL and Common Source Scattering Parameters PLASTIC On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) MW7IC2240GNR1 Integrated Quiescent Current Temperature Compensation with Enable/ (1) Disable Function CASE 1329--09 Integrated ESD Protection TO--272 WB--16 225C Capable Plastic Package PLASTIC RoHS Compliant MW7IC2240NBR1 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. 1 GND 16 GND 2 V DS1 15 NC 3 NC 4 V NC DS1 NC 5 RF /V 6 14 out DS2 RF in RF RF /V in out DS2 7 NC V 8 GS1 9 V V GS2 GS1 QuiescentCurrent V 10 13 NC DS1 (1) V TemperatureCompensation GS2 12 11 GND GND V DS1 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --0.5, +5 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Input Power P 20 dBm in Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC 4WCW (P = 3.95 W CW, Case Temperature = 68 C) Stage 1, 28 Vdc, I =90 mA 3.9 out DQ1 Stage 2, 28 Vdc, I = 420 mA 1.3 DQ2 40 W CW (P = 39.4 W CW, Case Temperature = 80 C) Stage 1, 28 Vdc, I =90 mA 3.2 out DQ1 Stage 2, 28 Vdc, I = 420 mA 1.2 DQ2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 0 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) II (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at