DocumentNumber:MW7IC2220N FreescaleSemiconductor Rev. 2, 5/2011 TechnicalData RFLDMOSWidebandIntegrated MW7IC2220NR1 PowerAmplifiers MW7IC2220GNR1 The MW7IC2220N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage MW7IC2220NBR1 structureisratedfor24to32Voltoperationandcoversalltypicalcellularbase station modulation formats including TD--SCDMA. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I =80mA, DD DQ1 I = 300mA, P = 2Watts Avg., f = 2167.5MHz, IQ MagnitudeClipping, DQ2 out 2110--2170MHz,2WAvg.,28V ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% SINGLEW--CDMA Probability onCCDF. RFLDMOSWIDEBAND Power Gain 31dB INTEGRATEDPOWERAMPLIFIERS Power AddedEfficiency 13% ACPR 5MHz Offset --50dBc in3.84MHz Bandwidth Capableof Handling5:1VSWR, 28Vdc, 2140MHz, 20Watts CW CASE1886--01 Output Power TO--270WB--16 Stableintoa5:1VSWR. AllSpurs Below --60dBc 100mW to5Watts PLASTIC CW P . out MW7IC2220NR1 Typical P 1dB CompressionPoint 20Watts CW out Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters CASE1887--01 andCommonSourceS--Parameters TO--270WB--16GULL On--ChipMatching(50Ohm Input, DC Blocked, >3Ohm Output) PLASTIC IntegratedQuiescent Current TemperatureCompensationwith MW7IC2220GNR1 (1) Enable/DisableFunction IntegratedESD Protection 225C CapablePlastic Package CASE1329--09 TO--272WB--16 RoHSCompliant PLASTIC InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. MW7IC2220NBR1 GND 1 16 GND 2 V DS1 15 NC 3 NC 4 NC V DS1 NC 5 RF /V 6 14 out DS2 RF in RF RF /V in out DS2 7 NC 8 V GS1 V 9 GS2 V GS1 QuiescentCurrent NC V 10 13 DS1 (1) V TemperatureCompensation GS2 12 GND GND 11 V DS1 (TopView) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --0.5,+5 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC 2WAvg. (P =2W CW,CaseTemperature=78C) Stage1,28Vdc,I =80mA 4.3 out DQ1 Stage2,28Vdc,I =300mA 1.5 DQ2 20W Avg. (P =20W CW,CaseTemperature=82C) Stage1,28Vdc,I =80mA 4.3 out DQ1 Stage2,28Vdc,I =300mA 1.25 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 0(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III(Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit Stage1OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Stage1OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =23Adc) DS D GateQuiescentVoltage V 2.8 Vdc GS(Q) (V =28Vdc,I =80mAdc) DS DQ1 FixtureGateQuiescentVoltage V 9.5 12.2 16.5 Vdc GG(Q) (V =28Vdc,I =80mAdc,MeasuredinFunctionalTest) DD DQ1 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat