X-On Electronics has gained recognition as a prominent supplier of MW7IC2220NR1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MW7IC2220NR1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MW7IC2220NR1 NXP

MW7IC2220NR1 electronic component of NXP
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Part No.MW7IC2220NR1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amp Module Single Power Amp 2.2GHz 32V 17-Pin TO-270 W T/R
Datasheet: MW7IC2220NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 60.5569 ea
Line Total: USD 60.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MW7IC2220NR1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MW7IC2220NR1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MW7IC2220N FreescaleSemiconductor Rev. 2, 5/2011 TechnicalData RFLDMOSWidebandIntegrated MW7IC2220NR1 PowerAmplifiers MW7IC2220GNR1 The MW7IC2220N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage MW7IC2220NBR1 structureisratedfor24to32Voltoperationandcoversalltypicalcellularbase station modulation formats including TD--SCDMA. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I =80mA, DD DQ1 I = 300mA, P = 2Watts Avg., f = 2167.5MHz, IQ MagnitudeClipping, DQ2 out 2110--2170MHz,2WAvg.,28V ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% SINGLEW--CDMA Probability onCCDF. RFLDMOSWIDEBAND Power Gain 31dB INTEGRATEDPOWERAMPLIFIERS Power AddedEfficiency 13% ACPR 5MHz Offset --50dBc in3.84MHz Bandwidth Capableof Handling5:1VSWR, 28Vdc, 2140MHz, 20Watts CW CASE1886--01 Output Power TO--270WB--16 Stableintoa5:1VSWR. AllSpurs Below --60dBc 100mW to5Watts PLASTIC CW P . out MW7IC2220NR1 Typical P 1dB CompressionPoint 20Watts CW out Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters CASE1887--01 andCommonSourceS--Parameters TO--270WB--16GULL On--ChipMatching(50Ohm Input, DC Blocked, >3Ohm Output) PLASTIC IntegratedQuiescent Current TemperatureCompensationwith MW7IC2220GNR1 (1) Enable/DisableFunction IntegratedESD Protection 225C CapablePlastic Package CASE1329--09 TO--272WB--16 RoHSCompliant PLASTIC InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. MW7IC2220NBR1 GND 1 16 GND 2 V DS1 15 NC 3 NC 4 NC V DS1 NC 5 RF /V 6 14 out DS2 RF in RF RF /V in out DS2 7 NC 8 V GS1 V 9 GS2 V GS1 QuiescentCurrent NC V 10 13 DS1 (1) V TemperatureCompensation GS2 12 GND GND 11 V DS1 (TopView) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --0.5,+5 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC 2WAvg. (P =2W CW,CaseTemperature=78C) Stage1,28Vdc,I =80mA 4.3 out DQ1 Stage2,28Vdc,I =300mA 1.5 DQ2 20W Avg. (P =20W CW,CaseTemperature=82C) Stage1,28Vdc,I =80mA 4.3 out DQ1 Stage2,28Vdc,I =300mA 1.25 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 0(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III(Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit Stage1OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Stage1OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =23Adc) DS D GateQuiescentVoltage V 2.8 Vdc GS(Q) (V =28Vdc,I =80mAdc) DS DQ1 FixtureGateQuiescentVoltage V 9.5 12.2 16.5 Vdc GG(Q) (V =28Vdc,I =80mAdc,MeasuredinFunctionalTest) DD DQ1 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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