Document Number: MW7IC2040N Freescale Semiconductor Rev. 1, 11/2009 Technical Data RF LDMOS Wideband Integrated MW7IC2040NR1 Power Amplifiers MW7IC2040GNR1 The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage MW7IC2040NBR1 structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I = DD DQ1 130 mA, I = 330 mA, P = 4 Watts Avg., f = 1932.5, Channel DQ2 out 1930-1990 MHz, 1805-1880 MHz, Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability 4 W AVG., 28 V on CCDF. SINGLE W-CDMA, GSM EDGE, GSM Power Gain 32 dB Power Added Efficiency 17.5% RF LDMOS WIDEBAND ACPR 5 MHz Offset -50 dBc in 3.84 MHz Bandwidth INTEGRATED POWER AMPLIFIERS Capable of Handling 5:1 VSWR, 32 Vdc, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated P ) out Stable into a 3:1 VSWR. All Spurs Below -60 dBc 100 mW to 40 Watts CASE 1886-01 CW P . out TO-270 WB-16 Typical P 1 dB Compression Point 30 Watts CW out PLASTIC GSM EDGE Application MW7IC2040NR1 Typical GSM EDGE Performance: V = 28 Volts, I = 90 mA, I = DD DQ1 DQ2 430 mA, P = 16 Watts Avg., 1805-1880 MHz out Power Gain 33 dB CASE 1887-01 Power Added Efficiency 35% Spectral Regrowth 400 kHz Offset = -62 dBc TO-270 WB-16 GULL Spectral Regrowth 600 kHz Offset = -77 dBc PLASTIC EVM 1.5% rms MW7IC2040GNR1 GSM Application Typical GSM Performance: V = 28 Volts, I = 90 mA, I = 430 mA, DD DQ1 DQ2 P = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz CASE 1329-09 out Power Gain 31 dB TO-272 WB-16 Power Added Efficiency 50% PLASTIC MW7IC2040NBR1 Features Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/ (1) Disable Function Integrated ESD Protection 225C Capable Plastic Package RoHS Compliant GND 1 16 GND V 2 In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. DS1 NC 15 V GS2 3 V 4 GS1 NC 5 V DS1 RF 6 14 RF /V in out DS2 NC 7 RF RF /V in out DS2 V 8 GS1 V 9 GS2 NC V 10 13 DS1 GND 12 GND 11 V GS1 Quiescent Current (1) V Temperature Compensation (Top View) GS2 Note: Exposed backside of the package is V DS1 the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +65 Vdc DSS Gate-Source Voltage V -0.5, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T -65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Input Power P 25 dBm in Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC W-CDMA (P = 4 W Avg., Case Temperature = 73C) Stage 1, 28 Vdc, I = 130 mA 4.0 out DQ1 Stage 2, 28 Vdc, I = 330 mA 1.5 DQ2 GSM EDGE (P = 16 W Avg., Case Temperature = 76C) Stage 1, 28 Vdc, I = 130 mA 4.1 out DQ1 Stage 2, 28 Vdc, I = 330 mA 1.4 DQ2 GSM (P = 40 W Avg., Case Temperature = 79C) Stage 1, 28 Vdc, I = 130 mA 3.9 out DQ1 Stage 2, 28 Vdc, I = 330 mA 1.3 DQ2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Stage 1 Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 65 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 1.5 Vdc, V = 0 Vdc) GS DS Stage 1 On Characteristics Gate Threshold Voltage V 1.2 2 2.7 Vdc GS(th) (V = 10 Vdc, I = 25 Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V = 28 Vdc, I = 130 mAdc) DS DQ1 Fixture Gate Quiescent Voltage V 13 14.5 16 Vdc GG(Q) (V = 28 Vdc, I = 130 mAdc, Measured in Functional Test) DD DQ1 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at