X-On Electronics has gained recognition as a prominent supplier of MW7IC930NR1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MW7IC930NR1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MW7IC930NR1 NXP

MW7IC930NR1 electronic component of NXP
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Part No.MW7IC930NR1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-270 W T/R
Datasheet: MW7IC930NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MW7IC930NR1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MW7IC930NR1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MW7IC930N FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFLDMOSWidebandIntegrated MW7IC930NR1 PowerAmplifiers MW7IC930GNR1 The MW7IC930N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage MW7IC930NBR1 structureisratedfor24to32Voltoperationandcoversalltypicalcellularbase station modulation. DriverApplication900MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = 728--768MHz,920--960MHz, DD DQ1 106mA, I = 285mA, P = 3.2Watts Avg., IQ MagnitudeClipping, DQ2 out 3.2WAVG.,28V ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% SINGLEW--CDMA Probability onCCDF. RFLDMOSWIDEBAND G PAE ACPR INTEGRATEDPOWERAMPLIFIERS ps (1) Frequency (dB) (%) (dBc) 920MHz 36.6 16.1 --48.0 CASE1886--01 940MHz 36.8 16.7 --48.7 TO--270WB--16 960MHz 36.6 17.3 --48.6 PLASTIC Capableof Handling10:1VSWR, 32Vdc, 940MHz, 48Watts CW MW7IC930NR1 Output Power (3dB Input Overdrivefrom RatedP ) out Stableintoa5:1VSWR. AllSpurs Below --60dBc 1mW to30Watts CW P . CASE1887--01 out TO--270WB--16GULL Typical P 1dB CompressionPoint 31Watts CW, I =40mA, out DQ1 I = 340mA PLASTIC DQ2 MW7IC930GNR1 DriverApplication700MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ1 106mA, I = 285mA, P = 3.2Watts Avg., IQ MagnitudeClipping, DQ2 out ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% Probability onCCDF. CASE1329--09 G PAE ACPR ps TO--272WB--16 Frequency (dB) (%) (dBc) PLASTIC 728MHz 36.4 16.1 --47.7 MW7IC930NBR1 748MHz 36.4 16.1 --47.8 768MHz 36.4 16.0 --47.9 Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked, >5Ohm Output) (2) IntegratedQuiescent Current TemperatureCompensationwithEnable/ DisableFunction IntegratedESD Protection 225C CapablePlastic Package GND 1 16 GND 2 RoHSCompliant NC 15 NC NC 3 InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. V 4 DS1 GND 5 RF 6 14 V RF /V DS1 in out DS2 7 GND V 8 RF GS1 RF /V in out DS2 V 9 GS2 NC 10 13 NC GND 12 11 GND V GS1 QuiescentCurrent (TopView) (2) V TemperatureCompensation GS2 Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. 900MHz DriverFrequency Bandtabledatacollectedin the900MHz applicationtestfixture.SeeFig.7. 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC (CaseTemperature80C,3.2W CW) Stage1,28Vdc,I =106mA 5.5 DQ1 Stage2,28Vdc,I =285mA 1.6 DQ2 (CaseTemperature80C,30W CW) Stage1,28Vdc,I =40mA 5.8 DQ1 Stage2,28Vdc,I =340mA 1.2 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B (Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) II (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit Stage1OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =14Adc) DS D GateQuiescentVoltage V 2.8 Vdc GS(Q) (V =28Vdc,I =106mA) DS DQ1 (4) FixtureGateQuiescentVoltage V 6.9 9.4 11.9 Vdc GG(Q) (V =28Vdc,I =106mA,MeasuredinFunctionalTest) DD DQ1 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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