AVT-54689
50 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description Features
Avago Technologies AVT-54689 is an economical, easy- Small signal gain amplifier
to-use, general purpose InGaP HBT MMIC gain block am-
Operating frequency 50 MHz to 6 GHz
plifier utilizing Darlington pair configuration housed in a
Unconditionally stable
3-lead (SOT 89) surface mount plastic package.
50 Ohm input & output
The Darlington feedback structure provides inherent
Industry standard SOT-89
broad bandwidth performance, resulting in useful operat-
ing frequency up to 6 GHz. This is an ideal device for small-
Lead-free, RoHS compliant, Green
signal gain cascades or IF amplification.
Specifications
AVT-54689 is fabricated using advanced InGaP HBT
(hetero-junction Bipolar Transistor) technology that offer -
2 GHz, 5 V Vcc, 58 mA (typ.)
ing state-of-the-art reliability, temperature stability and
17.8 dB Gain
performance consistency.
17.2 dBm P1dB
Component Image
30 dBm OIP3
4.2 dB NF
14.8 IRL and 10.8 ORL
54X
Applications
Wireless Data / WLAN
#3 #2 #1
#1 #2 #3 WiMAX / WiBRO
RFin GND RFout RFout GND RFin
CATV & Cable modem
Top View Bottom View
ISM
Notes:
Typical Biasing Configuration
Package marking provides orientation and identification
54 = Device Code
Vcc
X = Month of manufacture
C C
byp byp
L
Attention: Observe precautions for han-
dling electrostatic sensitive devices.
ESD Machine Model = 180 V C
block
RFin RFout
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R: Pin 1 Pin 3
C Input Output
block
Electrostatic Discharge, Damage and Control.
Pin 2
(Gnd) (1)
Absolute Maximum Rating T = 25 C Thermal Resistance
A
(3)
Symbol Parameter Units Absolute Max.
Thermal Resistance = 114 C/W
jc
(I = 57 mA, T = 94 C)
V Device Voltage V 5.5 d b
d, MAX
Notes:
P CW RF Input Power dBm 18
IN, MAX
1. Operation of this device in excess of any of
(2)
P Total Power Dissipation mW 465
DISS these limits may cause permanent damage.
2. Ground lead temperature is 25 C. Derate 8.8
T Operating Temperature C -40 to 85
OPT
mW/ C for T >117 C.
c
T Junction Temperature C 150
J, MAX 3. Thermal resistance measured using Infrared
measurement technique.
T Storage Temperature C -65 to 150
STG
Electrical Specification
Symbol Parameter and Test Condition Frequency Units Min. Typ. Max.
I Device Current mA 51.5 57.7 64.5
d
G Power Gain 900 MHz 20.5
p
dB
2000 MHz 16.3 17.8 19.3
f 3 dB Bandwidth GHz 2.5
3dB
[5] rd
OIP3 Output 3 Intercept Point 900 MHz 32.3
dBm
2000 MHz 28 29.9
S11 Input Return Loss, 50 source 900 MHz -22.4
dB
2000 MHz -14.8
S22 Output Return Loss, 50 load 900MHz -13.8
dB
2000 MHz -10.8
S12 Reverse Isolation 900 MHz -23.4
dB
2000 MHz -23.8
P1dB Output Power at 1dB Gain Compression 900 MHz 19.4
dBm
2000 MHz 17.2
NF Noise Figure 900 MHz 3.8
dB
2000 MHz 4.2
2