2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E A Microchip Technology Company Data Sheet SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli- ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28% power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing 3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm. This power amplifier requires no external RF matching, and only requires one exter- nal DC-bias capacitor to meet the specified performance. It offers high-speed power-up/-down control through a single reference voltage pin and includes a tem- perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con- tact USON package. Features Input/Output ports internally matched to 50 and Low shut-down current (~2 A) DC decoupled Stable performance over temperature High gain: ~2 dB gain variation between -40C to +85C ~1 dB power variation between -40C to +85C Typically 28 dB gain across 2.42.5 GHz Excellent on-chip power detection High linear output power: >15 dB dynamic range, dB-wise linear >24 dBm P1dB VSWR insensitive, temperature stable - Single-tone measurement. Please refer to Absolute Maximum Stress Ratings on page 5 Packages available Meets 802.11g OFDM ACPR requirement up to 21.5 dBm 8-contact X2SON 2mm x 2mm x 0.4mm ~3% added EVM up to 18 dBm for 54 Mbps 802.11g 8-contact USON 2mm x 2mm x 0.6mm signal Meets 802.11b ACPR requirement up to 22 dBm Non-Pb (lead-free), RoHS compliant, and Halogen free High power-added efficiency/Low operating cur- rent for both 802.11b/g/n applications ~28%/138 mA P = 21.5 dBm for 802.11g OUT Applications ~33%/155 mA P = 22.5 dBm for 802.11b OUT WLAN (IEEE 802.11b/g/n) Single-pin low I power-up/down control REF I <2 mA REF Home RF Low idle current Cordless phones ~60 mA I CQ 2.4 GHz ISM wireless equipment High-speed power-up/down Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included <200 ns 2012 Silicon Storage Technology, Inc. www.microchip.com DS-75004E 07/12 PROPRIETARY AND CONFIDENTIAL2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E A Microchip Technology Company Data Sheet Product Description The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech- nology.The input/output RF ports are fully matched to 50internally. These RF ports are DC decoupled and require no DC-blocking capacitors or matching components. This helps reduce the system boards Bill of Materi- als (BOM) cost. The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in compliance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added efficiency (PAE) POUT = 21.5 dBm for 802.11g and 33% PAE POUT = 22 dBm for 802.11b. The SST12LP17E has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum mask at 22.5 dBm. The SST12LP17E also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes the SST12LP17E REF controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST12LP17E ideal for the final stage power amplification in battery-powered 802.11b/g/n WLAN transmitter applications. The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range, >15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2012 Silicon Storage Technology, Inc. DS-75004E 07/12 2 PROPRIETARY AND CONFIDENTIAL