AG503-86 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The AG503-86 is a general-purpose buffer amplifier that DC 6000 MHz 4 offers high dynamic range in a low-cost surface-mount 20 dB Gain 900 MHz package. At 900 MHz, the AG503-86 typically provides +16 dBm P1dB 900 MHz 20 dB gain, +29 dBm OIP3, and +16 dBm P1dB. The device combines dependable performance with consistent 1 3 +29 dBm OIP3 900 MHz RF In RF Out quality to maintain MTTF values exceeding 1000 years at Single Voltage Supply mounting temperatures of +85 C and is housed in a lead- Internally matched to 50 free/green/RoHS-compliant SOT-86 (micro-X) industry- 2 standard SMT package. Robust 1000V ESD, Class IC GND Lead-free/green/RoHS-compliant The AG503-86 consists of a Darlington-pair amplifier SOT-86 package Function Pin No. using the high reliability InGaP/GaAs HBT process Input 1 technology and only requires DC-blocking capacitors, a Output/Bias 3 bias resistor, and an inductive RF choke for operation. Ground 2, 4 Applications The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies Mobile Infrastructure such as GPRS, GSM, CDMA, and W-CDMA. In addition, CATV / FTTX the AG503-86 will work for other various applications WLAN / ISM within the DC to 6 GHz frequency range such as CATV and WiMAX. RFID WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 6000 Frequency MHz 500 900 1900 2140 Test Frequency MHz 900 S21 dB 20.8 20.2 17.8 17.6 Gain dB 20.2 S11 dB -20 -20 -18 -18 Input Return Loss dB 20 S22 dB -21 -20 -15 -13 Output Return Loss dB 20 Output P1dB dBm +16.0 +15.9 +14.6 +14.3 Output P1dB dBm +15.9 Output IP3 dBm +28.9 +28.8 +27.8 +27.4 (2) Output IP3 dBm +28.8 Noise Figure dB 2.9 2.9 3.1 3.1 Output IP2 dBm +37 Noise Figure dB 2.9 Test Frequency MHz 1900 Gain dB 16.8 17.8 18.8 Output P1dB dBm +14.6 (2) Output IP3 dBm +27.8 Device Voltage V 5 Device Current mA 45 1. Test conditions: T = 25 C, Supply Voltage = +6 V, R = 22.1 , 50 System. bias 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +125 C DC Voltage +5.8 V Part No. Description RF Input Power (continuous) +10 dBm InGaP HBT Gain Block AG503-86G Thermal Resistance, Rth 257 C/W (lead-free/green/RoHS-compliant SOT-86 Pkg) Junction Temperature +177 C AG503-86PCB 700 2400 MHz Fully Assembled Eval. Board Operation of this device above any of these parameters may cause permanent damage. Standard tape / reel size = 3000 pieces on a 13 reel Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 5 March 2008 AG503-86 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = 6 V, R = 22.1 , I = 45 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 21.0 20.8 20.2 17.8 17.6 17.2 15.3 11.8 S11 dB -20 -20 -20 -18 -18 -18 -20 -20 S22 dB -18 -21 -20 -15 -13 -13 -16 -14 Output P1dB dBm +16.2 +16.0 +15.9 +14.6 +14.3 +14.0 +11.0 Output IP3 dBm +28.9 +28.9 +28.8 +27.8 +27.4 +27.0 +24.4 Noise Figure dB 2.9 2.9 2.9 3.1 3.1 3.2 1. Test conditions: T = 25 C, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1 , Icc = 45 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss I-V Curve 22 0 80 20 -10 60 Optimal operating point 18 -20 40 16 20 -30 14 S11 S22 -40 C +25 C +85 C 0 -40 12 3.0 3.4 3.8 4.2 4.6 5.0 5.4 0123 45 6 01 2 3 4 Device Voltage (V) Frequency (GHz) Frequency (GHz) Output IP3 vs. Frequency Output IP2 vs. Frequency Noise Figure vs. Frequency 35 45 5 4 30 40 3 25 35 2 20 30 1 -40 C +25 C +85 C -40 C +25 C +85 C -40 C +25 C +85 C 0 15 25 00.5 11.522.5 33.5 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) Frequency (GHz) Frequency (MHz) P1dB vs. Frequency Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power frequency = 900 MHz frequency = 2000 MHz 20 20 20 18 20 18 16 16 16 15 Gain Gain 16 12 14 12 10 14 8 12 8 5 Output Power Output Power 12 4 10 4 -40 C +25 C +85 C 0 10 0 8 0 00.511.522.5 3 3.5 4 -12 -8 -4 048 -12 -8 -4 048 Frequency (GHz) Input Power (dBm) Input Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 5 March 2008 Gain (dB) P1dB (dBm) OIP3 (dBm) Gain (dB) OIP2 (dBm) S11, S22 (dB) Output Power (dBm) Gain (dB) NF (dB) Device Current (mA) Output Power (dBm)