DocumentNumber:AFIC10275N FreescaleSemiconductor Rev. 0, 4/2015 Technical Data RFLDMOSWidebandIntegrated AFIC10275N PowerAmplifiers AFIC10275GN The avionics AFIC10275N is a 2--stage RFIC designed for transponder applications operating from 978 to 1090 MHz. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B. NarrowbandPerformance: (50 Vdc, T =25 C) A 9781090MHz,250WPEAK,50V P Frequency out G 2ndStageEff. ps AIRFASTRFLDMOSWIDEBAND SignalType (W) (MHz) (dB) (%) INTEGRATEDPOWERAMPLIFIERS (1) 1090 Pulse 250 Peak 32.1 61.4 (128 sec, 10% Duty Cycle) TypicalWidebandPerformance (50 Vdc, T =25 C) A Frequency P G 2ndStageEff. out ps (2) (MHz) SignalType (W) (dB) (%) TO--270WB--14 PLASTIC Pulse 250 Peak 978 32.6 61.0 AFIC10275N (128 sec, 10% Duty Cycle) 1030 32.5 59.1 1090 30.1 60.6 LoadMismatch/Ruggedness TO--270WBG--14 Frequency P Test in PLASTIC (MHz) SignalType VSWR (W) Voltage Result AFIC10275GN (1) 1090 Pulse >10:1 at all 0.345 W 50 No Device (128 sec, 10% Phase Angles Peak Degradation Duty Cycle) (3 dB Overdrive) 1. Measured in 1090 MHz narrowband test circuit. 2. Measured in 978 1090 MHz broadband reference circuit. Features Characterized from 978 to 1090 MHz On--Chip Input (50 Ohm) and Interstage Matching Single Ended Integrated ESD Protection Low Thermal Resistance Integrated Quiescent Current Temperature Compensation with (3) Enable/Disable Function TypicalApplications Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars Mode S Transponders, Including: Traffic Alert and Collision Avoidance Systems (TCAS) Automatic Dependent Surveillance--Broadcast In and Out (ADS--B) Using, e.g., 1090 Extended Squitter or Universal Access Transponder (UAT) Mode S ELM Interrogators 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to V 1 DS1 V 2 GS2 V 3 GS1 14 RF /V out DS2 N.C. 4 RF 5 V in DS1 RF 6 in RF 7 in RF Stage1 Stage2 RF /V RF 8 in out DS2 in RF /V N.C. 9 13 out DS2 N.C. 10 Thermal Sense 11 V GS1 QuiescentCurrent RF Sense 12 (1) out TemperatureCompensation V GS2 andThermal Sense Thermal Sense (Top View) RF Sense out Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +100 Vdc DSS Gate--Source Voltage V 6, +10 Vdc GS Operating Voltage V 50, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to 150 C C (2,3) Operating Junction Temperature Range T 40 to 225 C J Input Power P 25 dBm in Table2.ThermalCharacteristics (3,4) Characteristic Symbol Value Unit ThermalResistance, Junction to Case Z C/W JC Case Temperature 81C, 250 W Peak, 128 sec Pulse Width, 10% Duty Cycle, 1090 MHz Stage 1, 50 Vdc, I =80mA 1.1 DQ1 Stage 2, 50 Vdc, I =150 mA 0.15 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) Class 2, passes 2500 V Machine Model(per EIA/JESD22--A115) Class A, passes 150 V Charge Device Model(per JESD22--C101) Class II, passes 200 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to