DocumentNumber:AFSC5G23D37 NXPSemiconductors Rev. 1, 05/2019 TechnicalData PowerAmplifierModuleforLTEand AFSC5G23D37 5G TheAFSC5G23D37isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh 23002400MHz,27dB,5WAvg. performance in the smallest footprint. Ideal for applications in massive MIMO AIRFASTPOWERAMPLIFIER systems,outdoorsmallcells,andlowpowerremoteradioheads.The MODULE field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE systems. Typical LTE Performance: P =5WAvg.,V =26Vdc,1 20MHz LTE, out DD (1) Input SignalPAR = 8dB 0.01%Probability onCCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 2300MHz 26.7 29.4 38.4 2355MHz 27.0 30.9 37.9 2400MHz 27.1 31.2 37.0 1. AlldatameasuredwithdevicesolderedinNXP referencecircuit. 10mm 6mmModule Features Frequency: 23002400MHz Advancedhighperformancein--packageDoherty Fully matched(50ohm input/output, DC blocked) Designedfor low complexity analogor digitallinearizationsystems 20182019NXPB.V. AFSC5G23D37 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND GND 2 17 RF out V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) Pin 1 index area 18 1 17 2 16 27 3 15 4 14 5 (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections AFSC5G23D37 RF DeviceData NXP Semiconductors 2 13 19 V 6 26 GND GP2 12 20 V 7 25 GND GP1 11 21 V GC 1 8 24 GND 10 22 V 9 23 GND GC 2 9 23 V 10 22 GND DC1 8 24 V DC2 11 21 GND 7 25 GND 12 20 GND 6 26 GND 13 19 GND