X-On Electronics has gained recognition as a prominent supplier of MAAL-011151-TR0100 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MAAL-011151-TR0100 RF Amplifier are a product manufactured by MACOM. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MAAL-011151-TR0100 MACOM

MAAL-011151-TR0100 electronic component of MACOM
MAAL-011151-TR0100 MACOM
MAAL-011151-TR0100 RF Amplifier
MAAL-011151-TR0100  Semiconductors

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See Product Specifications
Part No. MAAL-011151-TR0100
Manufacturer: MACOM
Category: RF Amplifier
Description: RF Amplifier 2-18GHz LNA
Datasheet: MAAL-011151-TR0100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 142.417 ea
Line Total: USD 142.42 
Availability - 81
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
81
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 142.417
10 : USD 127.721
20 : USD 127.721
50 : USD 127.721
100 : USD 127.721
200 : USD 125.543
500 : USD 122.859
1000 : USD 122.76
2000 : USD 122.749

   
Manufacturer
Product Category
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Isolation Db
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MAAL-011151-TR0100 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAAL-011151-TR0100 and other electronic components in the RF Amplifier category and beyond.

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Ultra Low Phase Noise Amplifier 2 - 18 GHz MAAL-011151 Rev. V2 Features Functional Schematic Wideband Performance Noise Figure: 3.5 dB 10 GHz Phase Noise: -165 dBc/Hz 100 kHz Offset Bias Voltage: 5 V Bias Current: 60 mA 50 Matched Input / Output Positive Voltage Only Lead-Free 5 mm 32-lead PQFN Package RoHS* Compliant Applications Test & Measurement, EW, ECM, and Radar Description The MAAL-011151 is an easy to use, wideband low noise distributed amplifier in a lead-free 5 mm 32-lead PQFN package. It operates from 2 to 18 GHz and provides 15 dB of linear gain, 19 dBm of P1dB, and 3.5 dB of noise figure at 10 GHz. The input and output are fully matched to 50 with typical return loss >10 dB. The RF input and RF output ports are DC blocked. Pin Configuration Amplifier control is available through the use of a control circuit. Pin Pin Name Description This product is fabricated using a low phase noise 1,3,7-13,16, N/C No Connection 17,19,23-32 HBT process which features full passivation for enhanced reliability. 2 VCC Collector Voltage The MAAL-011151 can be used as a low noise 4,6,20,22 GND Ground amplifier stage for signal generation applications. This device is ideally suited for Test and 5 RFIN RF Input Measurement, EW, ECM, and Radar applications where ultra low phase noise and drive power is 14 VB3 Bias Voltage 3 required. 15 VB2 Bias Voltage 2 1,2 Ordering Information 18 VB1 Bias Voltage 1 Part Number Package 21 RFOUT RF Output MAAL-011151-TR0100 100 piece reel 3 Paddle GND Ground MAAL-011151-001SMB Sample Board 3. The exposed pad centered on the package bottom must be 1. Reference Application Note M513 for reel size information. connected to RF, DC and thermal ground. 2. All sample boards include 3 loose parts. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Ultra Low Phase Noise Amplifier 2 - 18 GHz MAAL-011151 Rev. V2 4 Electrical Specifications: T = +25C, VCC = VCT = 5 V, Z = 50 A 0 Parameter Test Conditions Units Min. Typ. Max. P = -15 dBm IN 2 GHz 15.0 16 Gain dB 10 GHz 14.0 15 18 GHz 13.5 15 2 GHz 22 5 Output P3dB 10 GHz dBm 20 18 GHz 16 P = +5.7 dBm, 2 GHz 18.0 20 IN Output Power P = +3.0 dBm, 10 GHz dBm 15.0 19 IN P = -4.0 dBm, 18 GHz 9.0 13 IN Input Return Loss P = -15 dBm dB 10 IN Output Return Loss P = -15 dBm dB 10 IN 2 GHz 7.0 Noise Figure 10 GHz dB 3.5 18 GHz 8.0 P = -15 dBm IN 2 GHz 48 Isolation dB 10 GHz 42 18 GHz 33 P = +3 dBm, 12 GHz IN 100 Hz -143 Phase Noise 1 kHz dBc/Hz -149 10 kHz -158 100 kHz -165 ICQ mA 60 4 ICT Total current into R1, R2 mA 2 4. Reference detailed bias conditions on page 3. 5. MACOM does not recommend sustained operation at power levels above 3 dB compression. 8,9 Absolute Maximum Ratings Maximum Operating Conditions Parameter Rating Parameter Absolute Maximum P <3 dB IN Input Power 12 dBm Input Power Compression Point ICQ 120 mA ICQ 90 mA 6,7 VCC, VB1, VB2, VB3 6 V Junction Temperature 130C VB1, VB2, VB3, Current 5 mA Operating Temperature -40C to +85C 10 Junction Temperature 150C 6. Operating at nominal conditions with junction temperature 6 130C will ensure MTTF > 1 x 10 hours. Storage Temperature -65C to +125C 7. Junction Temperature (T ) = T + * ((V * I) - (P - P )). J C JC OUT IN Typical thermal resistance ( ) = 120C/W. JC 8. Exceeding any one or combination of these limits may cause a) For T = +25C C permanent damage to this device. T = +72C 5 V, 98 mA, P = 20 dBm, P = 4.5 dBm J OUT IN 9. MACOM does not recommend sustained operation near b) For T = +85C C these survivability limits. T = 129C 5 V, 88 mA, P = 19 dBm, P = 4.5 dBm J OUT IN 10. Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
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