DocumentNumber:AFM906N NXPSemiconductors Rev. 2, 11/2018 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFM906N Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device make it ideal for large--signal, common--source amplifier applications in 136941MHz,6.0W,7.5V handheldradioequipment. WIDEBAND Wideband Performance (In 440520 MHz reference circuit, 7.5 Vdc, T =25 C, CW) A AIRFASTRFPOWERLDMOS TRANSISTOR Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) (1,2) 440520 0.16 16.2 62.0 6.5 NarrowbandPerformance (7.5Vdc,T =25 C,CW) A Frequency G P ps D out (MHz) (B) (%) (W) (3) 520 20.3 70.8 6.8 LoadMismatch/Ruggedness DFN4 6 Frequency Signal P Test in (MHz) Type VSWR (dBm) Voltage Result N.C. 1 N.C. 16 (3) 520 CW >65:1 at all 21 10.8 NoDevice 2 15 N.C. N.C. PhaseAngles (3dB Overdrive) Degradation Drain Gate 3 14 1. Measuredin440520MHz broadbandreferencecircuit(page6). 2. Thevalues shownaretheminimum measuredperformancenumbers across the Gate 4 Drain 13 indicatedfrequency range. 3. Measuredin520MHz narrowbandproductiontestfixture(page9). 12 Drain Gate 5 Gate 6 11 Drain Features 7 10 N.C. N.C. Characterizedfor operationfrom 136to941MHz 8 9 N.C. N.C. Unmatchedinput andoutput allowingwidefrequency rangeutilization (TopView) IntegratedESD protection Integratedstability enhancements Note: Exposed backside of the package is thesourceterminalforthetransistor. Wideband fullpower across theband Exceptionalthermalperformance Figure1.PinConnections Extremeruggedness Highlinearity for: TETRA, SSB TypicalApplications Output stageVHF bandhandheldradio Output stageUHF bandhandheldradio Output stagefor 700800MHz handheldradio Generic 6W driver for ISM andbroadcast finalstagetransistors 2016, 2018NXPB.V. AFM906N RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+30 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS OperatingVoltage V 0to12.5 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+150 C J TotalDeviceDissipation T =25 C P 65.8 W C D Derateabove25 C 0.53 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.9 C/W JC CaseTemperature78C,6W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1000V MachineModel(perEIA/JESD22--A115) A,passes 50V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =30Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.8 2.15 2.6 Vdc GS(th) (V =10Vdc,I =78 Adc) DS D Drain--SourceOn--Voltage V 0.11 Vdc DS(on) (V =10Vdc,I =0.78Adc) GS D ForwardTransconductance g 4.4 S fs (V =7.5Vdc,I =4.7Adc) DS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat