X-On Electronics has gained recognition as a prominent supplier of AFM906NT1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFM906NT1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFM906NT1 NXP

AFM906NT1 electronic component of NXP
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Part No.AFM906NT1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
Datasheet: AFM906NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.323 ea
Line Total: USD 2.32 
Availability - 751
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5177

751
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.323
10 : USD 2.0585
100 : USD 1.817
250 : USD 1.748
500 : USD 1.587
1000 : USD 1.3455

   
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We are delighted to provide the AFM906NT1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFM906NT1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:AFM906N NXPSemiconductors Rev. 2, 11/2018 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFM906N Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device make it ideal for large--signal, common--source amplifier applications in 136941MHz,6.0W,7.5V handheldradioequipment. WIDEBAND Wideband Performance (In 440520 MHz reference circuit, 7.5 Vdc, T =25 C, CW) A AIRFASTRFPOWERLDMOS TRANSISTOR Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) (1,2) 440520 0.16 16.2 62.0 6.5 NarrowbandPerformance (7.5Vdc,T =25 C,CW) A Frequency G P ps D out (MHz) (B) (%) (W) (3) 520 20.3 70.8 6.8 LoadMismatch/Ruggedness DFN4 6 Frequency Signal P Test in (MHz) Type VSWR (dBm) Voltage Result N.C. 1 N.C. 16 (3) 520 CW >65:1 at all 21 10.8 NoDevice 2 15 N.C. N.C. PhaseAngles (3dB Overdrive) Degradation Drain Gate 3 14 1. Measuredin440520MHz broadbandreferencecircuit(page6). 2. Thevalues shownaretheminimum measuredperformancenumbers across the Gate 4 Drain 13 indicatedfrequency range. 3. Measuredin520MHz narrowbandproductiontestfixture(page9). 12 Drain Gate 5 Gate 6 11 Drain Features 7 10 N.C. N.C. Characterizedfor operationfrom 136to941MHz 8 9 N.C. N.C. Unmatchedinput andoutput allowingwidefrequency rangeutilization (TopView) IntegratedESD protection Integratedstability enhancements Note: Exposed backside of the package is thesourceterminalforthetransistor. Wideband fullpower across theband Exceptionalthermalperformance Figure1.PinConnections Extremeruggedness Highlinearity for: TETRA, SSB TypicalApplications Output stageVHF bandhandheldradio Output stageUHF bandhandheldradio Output stagefor 700800MHz handheldradio Generic 6W driver for ISM andbroadcast finalstagetransistors 2016, 2018NXPB.V. AFM906N RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+30 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS OperatingVoltage V 0to12.5 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+150 C J TotalDeviceDissipation T =25 C P 65.8 W C D Derateabove25 C 0.53 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.9 C/W JC CaseTemperature78C,6W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1000V MachineModel(perEIA/JESD22--A115) A,passes 50V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =30Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.8 2.15 2.6 Vdc GS(th) (V =10Vdc,I =78 Adc) DS D Drain--SourceOn--Voltage V 0.11 Vdc DS(on) (V =10Vdc,I =0.78Adc) GS D ForwardTransconductance g 4.4 S fs (V =7.5Vdc,I =4.7Adc) DS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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