BF999 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BF999 LBs 1=G 2=D 3=S - - - SOT23 Maximum Ratings Parameter Symbol Value Unit 20 V Drain-source voltage V DS 30 mA Continuous drain current I D Gate-source peak current I 10 mA GSM 200 mW Total power dissipation P tot T 76 C S C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch Thermal Resistance Parameter Symbol Value Unit 2) Channel - soldering point R 370 K/W thchs 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-20BF999 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 20 - - V Drain-source breakdown voltage V (BR)DS I = 10 A, -V = 4 V D GS Gate-source breakdown voltage V 6.5 - 12 (BR)GSS I = 10 mA, V = 0 GS DS Gate-source leakage current I - - 50 nA GSS V = 5 V, V = 0 GS DS 5 10 16 mA Drain current I DSS V = 10 V, V = 0 DS GS Gate-source pinch-off voltage -V - 0.8 1.5 V GS(p) V = 10 V, I = 20 A DS D Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. AC Characteristics Forward transconductance g 14 20 - mS fs V = 10 V, I = 10 mA DS D Gate input capacitance C - 2.5 - pF gss V = 10 V, I = 10 mA, f = 10 MHz DS D - 0.9 - pF Output capacitance C dss V = 10 V, I = 10 mA, f = 10 MHz DS D Power gain G - 27 - dB p V = 10 V, I = 10 mA, f = 45 MHz DS D - 2.1 - dB Noise figure F V = 10 V, I = 10 mA, f = 45 MHz DS D 2 2007-04-20