Document Number: MW6S004N Freescale Semiconductor Rev. 4, 6/2009 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies MW6S004NT1 up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two-Tone Performance 1960 MHz, 28 Volts, I = 50 mA, DQ P = 4 Watts PEP out Power Gain 18 dB 1-2000 MHz, 4 W, 28 V Drain Efficiency 33% LATERAL N-CHANNEL IMD -34 dBc RF POWER MOSFET Typical Two-Tone Performance 900 MHz, 28 Volts, I = 50 mA, DQ P = 4 Watts PEP out Power Gain 19 dB Drain Efficiency 33% IMD -39 dBc Capable of Handling 5:1 VSWR, 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features CASE 466-03, STYLE 1 PLD 1.5 Characterized with Series Equivalent Large-Signal Impedance Parameters PLASTIC On-Chip RF Feedback for Broadband Stability Integrated ESD Protection RoHS Compliant In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +68 Vdc DSS Gate-Source Voltage V -0.5, +12 Vdc GS Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 150 C J Table 2. Thermal Characteristics (1,2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 76C, 4 W PEP, Two-Tone 8.8 Case Temperature 79C, 4 W CW 8.5 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) 1. MTTF calculator available at Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 68 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 500 nAdc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.2 2 2.7 Vdc GS(th) (V = 10 Vdc, I = 50 mAdc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V = 28 Vdc, I = 50 mAdc) DS D (1) Fixture Gate Quiescent Voltage V 2.2 3 4.2 Vdc GG(Q) (V = 28 Vdc, I = 50 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.27 0.37 Vdc DS(on) (V = 10 Vdc, I = 50 mAdc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 21 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 25 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 30 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP, f1 = 1960 MHz, DD DQ out f2 = 1960.1 MHz, Two-Tone Test Power Gain G 16.5 18 20 dB ps Drain Efficiency 28 33 % D Intermodulation Distortion IMD -34 -28 dBc Input Return Loss IRL -12 -10 dB Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP, DD DQ out f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G 19 dB ps Drain Efficiency 33 % D Intermodulation Distortion IMD -39 dBc Input Return Loss IRL -12 dB 11 1. V = / x V . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. GG 10 GS(Q) Refer to Test Circuit Schematic. MW6S004NT1 RF Device Data Freescale Semiconductor 2