X-On Electronics has gained recognition as a prominent supplier of MW6S004NT1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MW6S004NT1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MW6S004NT1 NXP

MW6S004NT1 electronic component of NXP
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Part No.MW6S004NT1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
Datasheet: MW6S004NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.4675 ea
Line Total: USD 15.47 
Availability - 1314
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1314
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 15.4675
10 : USD 13.7885
25 : USD 13.639
50 : USD 12.8685
100 : USD 12.2475
250 : USD 11.868
500 : USD 11.2815
1000 : USD 10.787
2000 : USD 10.3615

   
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
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Packaging
Vgs - Gate-Source Voltage
Series
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MW6S004NT1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MW6S004NT1 and other electronic components in the RF MOSFET Transistors category and beyond.

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Document Number: MW6S004N Freescale Semiconductor Rev. 4, 6/2009 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies MW6S004NT1 up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two-Tone Performance 1960 MHz, 28 Volts, I = 50 mA, DQ P = 4 Watts PEP out Power Gain 18 dB 1-2000 MHz, 4 W, 28 V Drain Efficiency 33% LATERAL N-CHANNEL IMD -34 dBc RF POWER MOSFET Typical Two-Tone Performance 900 MHz, 28 Volts, I = 50 mA, DQ P = 4 Watts PEP out Power Gain 19 dB Drain Efficiency 33% IMD -39 dBc Capable of Handling 5:1 VSWR, 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features CASE 466-03, STYLE 1 PLD 1.5 Characterized with Series Equivalent Large-Signal Impedance Parameters PLASTIC On-Chip RF Feedback for Broadband Stability Integrated ESD Protection RoHS Compliant In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +68 Vdc DSS Gate-Source Voltage V -0.5, +12 Vdc GS Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 150 C J Table 2. Thermal Characteristics (1,2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 76C, 4 W PEP, Two-Tone 8.8 Case Temperature 79C, 4 W CW 8.5 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) 1. MTTF calculator available at Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 68 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 500 nAdc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.2 2 2.7 Vdc GS(th) (V = 10 Vdc, I = 50 mAdc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V = 28 Vdc, I = 50 mAdc) DS D (1) Fixture Gate Quiescent Voltage V 2.2 3 4.2 Vdc GG(Q) (V = 28 Vdc, I = 50 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.27 0.37 Vdc DS(on) (V = 10 Vdc, I = 50 mAdc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 21 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 25 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 30 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP, f1 = 1960 MHz, DD DQ out f2 = 1960.1 MHz, Two-Tone Test Power Gain G 16.5 18 20 dB ps Drain Efficiency 28 33 % D Intermodulation Distortion IMD -34 -28 dBc Input Return Loss IRL -12 -10 dB Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP, DD DQ out f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G 19 dB ps Drain Efficiency 33 % D Intermodulation Distortion IMD -39 dBc Input Return Loss IRL -12 dB 11 1. V = / x V . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. GG 10 GS(Q) Refer to Test Circuit Schematic. MW6S004NT1 RF Device Data Freescale Semiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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